1.

Conference Proceedings
Conference Proceedings
1. Activation Treatment of Ion Implanted Dopants Using Hybrid Super RTA Equipment
Kinoshita, A. ; Senzaki, J. ; Katou, M. ; Harada, S. ; Okamato, M. ; Nishizawa, S. ; Fukuda, K. ; Morigasa, F. ; Endou, T. ; Isii, T. ; Yashima, T.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.803-806,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
2.

Conference Proceedings
Conference Proceedings
2. Analysis of Low On-Resistance in 4H-SiC Double-Epitaxial MOSFET
Harada, S. ; Okamoto, M. ; Yatsuo, T. ; Fukuda, K. ; Arai, K.
Pub. info.: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.813-816,  2005.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 483-485
3.

Conference Proceedings
Conference Proceedings
3. 4.3 mΩcm2, 1100 V 4H-SiC Implantation and Epitaxial MOSFET
Harada, S. ; Kato, M. ; Okamoto, M. ; Yatsuo, T. ; Fukuda, K. ; Arai, K.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.1281-1284,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
4.

Conference Proceedings
Conference Proceedings
4. High Inversion Channel Mobility of 4H-SiC MOSFETs Fabricated on C(000-1) Epitaxial Substrate with Vicinal (Below 1o) Off-Angle
Fukuda, K. ; Kato, M. ; Harada, S. ; Kojima, K.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.1043-1046,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
5.

Conference Proceedings
Conference Proceedings
5. A Large Reduction in Interface-State Density for MOS Capacitor on 4H-SiC (11-2 0) Face Using H2 and H2O Vapor Atmosphere Post-Oxidation Annealing
Fukuda, K. ; Senzaki, J. ; Kushibe, M. ; Kojima, K. ; Kosugi, R. ; Suzuki, S. ; Harada, S. ; Suzuki, T. ; Tanaka, T. ; Arai, K.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1057-1060,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
6.

Conference Proceedings
Conference Proceedings
6. Significant Improvement of Inversion Channel Mobility in 4H-SiC MOSFET on (11-20) Face Using Hydrogen Post-Oxidation Annealing
Senzaki, J. ; Fukuda, K. ; Kojima, K. ; Harada, S. ; Kosugi, R. ; Suzuki, S. ; Suzuki, T. ; Arai, K.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1061-1064,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
7.

Conference Proceedings
Conference Proceedings
7. Improvements in Electrical Properties of n-Type-Implanted 4H-SiC Substrates Using High-Temperature Rapid Thermal Annealing
Senzaki, J. ; Harada, S. ; Kosugi, R. ; Suzuki, S. ; Fukuda, K. ; Arai, K.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.795-798,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
8.

Conference Proceedings
Conference Proceedings
8. TCAD Optimisation of 4H-SiC Channel-Doped MOSFET with P-Polysilicon Gate
Adachi, K. ; Johnson, C.M. ; Arai, K. ; Fukuda, K. ; Harada, S. ; Shinohe, T.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1085-1088,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
9.

Conference Proceedings
Conference Proceedings
9. Improved Channel Mobility in Normally-Off 4H-SiC MOSFETs with Buried Channel Structure
Harada, S. ; Suzuki, S. ; Senzaki, J. ; Kosugi, R. ; Adachi, K. ; Fukuda, K. ; Arai, K.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1069-1072,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
10.

Conference Proceedings
Conference Proceedings
10. Channel Engineering of Buried-Channel 4H-SiC MOSFET Based on the Mobility Model of the Oxide/4H-SiC Interface
Hatakeyama, T. ; Harada, S. ; Suzuki, S. ; Senzaki, J. ; Kosugi, R. ; Fukuda, K. ; Shinohe, T. ; Arai, K.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1081-1084,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393