1.

Conference Proceedings
Conference Proceedings
1. Red AlGaInP lasers:tunable and powerful
Schweizer,H. ; Lichtenstein,N. ; Gauggel,H.P. ; Kuhn,J. ; Hofmann,R. ; Winterhoff,R. ; Geng,C. ; Moritz,A. ; Hangleiter,A. ; Scholz,F.
Pub. info.: Applications of photonic technology 3 : closing the gap between theory, development, and application.  pp.1041-1059,  1998.  Bellingham, Wash..  SPIE - The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 3491
2.

Conference Proceedings
Conference Proceedings
2. Optical gain and waveguiding in GaN-based quantum well lasers
Heppel,S. ; Wirth,R. ; Im,J.S. ; Off,J. ; Scholz,F. ; Hangleiter,A.
Pub. info.: Physics and simulation of optoelectronic devices VII : 25-29 January 1999, San Jose, USA.  pp.32-40,  1999.  Bellingham, Wash..  SPIE - The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 3625
3.

Conference Proceedings
Conference Proceedings
3. Internal electric fields in nitride-based heterostructures
Hangleiter,A.
Pub. info.: Physics and simulation of optoelectronic devices VIII : 24-28 January 2000, San Jose, USA.  Part1  pp.58-68,  2000.  Bellingham, Wash..  SPIE - The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 3944
4.

Conference Proceedings
Conference Proceedings
4. Optical Absorption and Excitation Spectroscopy on GaInN/GaN Double Heterostructures and Quantum Wells
Hangleiter,A. ; Heppel,S. ; Off,J. ; Sohmer,A. ; Scholz,F.
Pub. info.: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part2  pp.1287-1290,  1998.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 264-268
5.

Conference Proceedings
Conference Proceedings
5. Time-Resolved Spectroscopy on GaN/AIGaN Double Heterostructures and Quantum Wells
Im,J.S. ; Off,J. ; Sohmer,A. ; Scholz,F. ; Hangleiter,A.
Pub. info.: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part2  pp.1299-1302,  1998.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 264-268
6.

Conference Proceedings
Conference Proceedings
6. Time Resolved Photoluminescence Measurements on Noble Gas Related Defects in Silicon
Bohnert,G. ; Hangleiter,A. ; Weronek,K. ; Thonke,K.
Pub. info.: Proceedings of the 15th International Conference on Defects in Semiconductors : Budapest, Hungary, August 22-26, 1988.  Part1  pp.361-366,  1989.  Aederlmannsdorf, Switzwelns.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 38-41