1.

Conference Proceedings
Conference Proceedings
1. Damage Evolution in Al-implanted 4H SiC
Hallen, A. ; Persson, P. O. A. ; Kuznetsov, A. Yu. ; Hultman, L. ; Svensson, B. G.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.869-872,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(2)
2.

Conference Proceedings
Conference Proceedings
2. Channeled Implants in 6H Silicon Carbide
Janson, M. S. ; Hallen, A. ; Godignon, P. ; Kuznetsov, A. Yu. ; Linnarsson, M. K. ; Morvan, E. ; Svensson, B. G.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.889-892,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(2)
3.

Conference Proceedings
Conference Proceedings
3. Current Voltage Characteristics of High-Voltage 4H Silicon Carbide Diodes
Zimmermann, U. ; Hallen, A. ; Breitholtz, B.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.1323-1326,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(2)
4.

Conference Proceedings
Conference Proceedings
4. 4H-SiC CVD Epitaxial Layers with Improved Structural Quality Grown on SiC Wafers with Reduced Micropipe Density
Kalinina, E. V. ; Zubrilov, A. ; Solov'ev, V. ; Kuznetsov, N. ; Hallen, A. ; Konstantinov, A. ; Karlsson, S. ; Rendakova, S. ; Dmitriev, V.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.505-508,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(1)
5.

Conference Proceedings
Conference Proceedings
5. Characterization of Aluminum and Titanium Oxides Deposited on 4H-SiC by Atomic Layer Deposition Technique
Wolborski, M. ; Bakowski, M. ; Pore, V. ; Ritala, M. ; Leskela, M. ; Schoner, A. ; Hallen, A.
Pub. info.: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.701-704,  2005.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 483-485
6.

Conference Proceedings
Conference Proceedings
6. Electron Beam Induced Current Investigation of High-Voltage 4H Silicon Carbide Diodes
Osterman, J. ; Hallen, A. ; Jargelius, M. ; Zimmermann, U. ; Galeckas, A. ; Breitholtz, B.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.777-780,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(1)
7.

Conference Proceedings
Conference Proceedings
7. Carrier Concentrations in Implanted and Epitaxial 4H-SiC by Scanning Spreading Resistance Microscopy
Osterman, J. ; Anand, S. ; Linnarsson, M.K. ; Hallen, A.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.663-666,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
8.

Conference Proceedings
Conference Proceedings
8. Comparison between Implanted and Epitaxial PiN-Diodes on 4H-Silicon Carbide
Zimmermann, U. ; Domeij, M. ; Hallen, A. ; Oestling, M.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.1037-1040,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
9.

Conference Proceedings
Conference Proceedings
9. Defect Evolution in Proton-Irradiated 4H SiC Investigated by Deep Level Transient Spectroscopy
Leveque, P. ; Martin, D. ; Svensson, B.G. ; Hallen, A.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.415-418,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436
10.

Conference Proceedings
Conference Proceedings
10. Channeling Measurements of Ion Implantation Damage in 4H-SiC
Kuznetsov, A.Yu. ; Janson, M.S. ; Hallen, A. ; Svensson, B.G. ; Jagadish, C. ; Gruenleitner, H. ; Pensl, G.
Pub. info.: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.595-598,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 353-356