1.

Conference Proceedings
Conference Proceedings
1. Defect Level of the Carbon Vacancy-Carbon Antisite Pair Center in SI 4H SiC
M.E. Zvanut ; G. Ngetich ; H.J. Chung ; A.Y. Polyakov ; M. Skowronski
Pub. info.: Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007.  pp.385-388,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 600-603
2.

Conference Proceedings
Conference Proceedings
2. Point Defects in 4H SiC Grown by Halide Chemical Vapor Deposition
M.E. Zvanut ; H.J. Chung ; A.Y. Polyakov ; M. Skowronski
Pub. info.: Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006.  pp.473-476,  2007.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 556-557