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22 results

Conference Proceedings

1. Selenium and Tellurium Double Donors in SiC

S.A. Reshanov ; H.B. Weber ; G. Pensl ; A. Schoener ; H. Nagasawa

Pub. info.:	Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006. pp.607-610, 2007. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	556-557

Conference Proceedings

2. Determination of the Electrical Capture Process of the EH₆-Center in n-Type 4H-SiC

J. Weber ; S. Beljakowa ; H.B. Weber ; G. Pensl ; B. Zippelius

Pub. info.:	Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation. pp.377-380, 2013. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	740-742

Conference Proceedings

3. Reduction of Implantation-Induced Point Defects by Germanium Ions in n-Type 4H-SiC

T. Sledziewski ; G. Ellrott ; W. Rösch ; H.B. Weber ; M. Krieger

Pub. info.:	Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France. pp.347-350, 2015. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	821-823

Conference Proceedings

4. Passivation and Generation of States at P-Implanted Thermally Grown and Deposited NType 4H-SiC/SiO₂ Interfaces

T. Sledziewski ; H.B. Weber ; M. Krieger

Pub. info.:	Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy. pp.697-700, 2016. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	858

Conference Proceedings

5. Influence of Growth Rate and C/Si-Ratio on the Formation of Point and Extended Defects in 4H-SiC Homoepitaxial Layers Investigated by DLTS

B. Zippelius ; M. Krieger ; H.B. Weber ; G. Pensl ; B. Kallinger

Pub. info.:	Silicon carbide and related materials 2008 : selected peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain. pp.393-396, 2009. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	615-617

Conference Proceedings

6. Z_1/2- and EH₆-Center in 4H-SiC: Not Identical Defects ?

B. Zippelius ; A. Glas ; H.B. Weber ; G. Pensl ; T. Kimoto

Pub. info.:	Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA. pp.251-254, 2012. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	717-720

Conference Proceedings

7. Thermally-Assisted Tunneling Model for 3C-SiC p⁺-n Diodes

B. Zippelius ; M. Krieger ; H.B. Weber ; G. Pensl ; H. Nagasawa

Pub. info.:	Silicon Carbide and Related Materials 2010 : Selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd. pp.571-574, 2011. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	679-680

Conference Proceedings

8. Iron-Related Defect Centers in 3C-SiC

T. Tsirimpis ; S. Beljakova ; B. Zippelius ; H.B. Weber ; G. Pensl

Pub. info.:	Silicon Carbide and Related Materials 2010 : Selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd. pp.265-268, 2011. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	679-680

Conference Proceedings

9. Dependence of the Channel Mobility in 3C-SiC n-MOSFETs on the Crystal Orientation and Channel Length

B. Zippelius ; M. Hauck ; S. Beljakowa ; H.B. Weber ; M. Krieger

Pub. info.:	Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA. pp.1113-1116, 2012. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	717-720

10.

Conference Proceedings

10. Iron-Related Defect Centers in 4H-SiC Detected by Deep Level Transient Spectroscopy

L. Trapaidze ; R. Hollweck ; S. Beljakowa ; B. Zippelius ; H.B. Weber

Pub. info.:	Silicon Carbide and Related Materials 2010 : Selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd. pp.257-260, 2011. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	679-680

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Author: H.B. Weber