Search records | 東京工業大学附属図書館文献データベース

You can search for articles included in proceedings of international conferences and technical papers which Tokyo Tech Library holds.
Tokyo Tech members can obtain tables of contents of 17,000 foreign journals by SwetScan. Tokyo Tech Library does not cover all of them.
List of Searchable Databases

Search for other sites by same keyword(s).

CiNii Books

NDL Search

WebcatPlus

amazon

カーリル

WorldCat

Clear Form

Filter

Title:

Author:

ISBN / ISSN / Paper No:

Source Title:

Publisher:

Pub. Date:

～

Type:

Conference Proceedings

Technical Paper

Academic Journal

Clear Form

Select: Check all | Remove all

Sort order

10 | 50 | 100 / Per Page

22 results

Conference Proceedings

1. Passivation and Generation of States at P-Implanted Thermally Grown and Deposited NType 4H-SiC/SiO₂ Interfaces

T. Sledziewski ; H.B. Weber ; M. Krieger

Pub. info.:	Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy. pp.697-700, 2016. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	858

Conference Proceedings

2. Electrical Activation of B⁺-Ions Implanted into 4H-SiC

T. Tsirimpis ; M. Krieger ; H.B. Weber ; G. Pensl

Pub. info.:	Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009. pp.697-700, 2010. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	645-648

Conference Proceedings

3. Transport Properties of Single-Layer Epitaxial Graphene on 6H-SiC (0001)

J. Jobst ; D. Waldmann ; K.V. Emtsev ; T. Seyller ; H.B. Weber

Pub. info.:	Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009. pp.637-644, 2010. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	645-648

Conference Proceedings

4. Reduction of Density of 4H-SiC / SiO₂ Interface Traps by Pre-Oxidation Phosphorus Implantation

T. Sledziewski ; A. Mikhaylov ; S. Reshanov ; A. Schöner ; H.B. Weber

Pub. info.:	Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan. pp.575-578, 2014. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	778-780

Conference Proceedings

5. Electrical and Structural Properties of Al-Implanted and Annealed 4H-SiC

M. Obernhofer ; M. Krieger ; F. Schmid ; H.B. Weber ; G. Pensl ; A. Schoerner

Pub. info.:	Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006. 556-557 pp.343-346, 2007. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	556-557

Conference Proceedings

6. Impurity Conduction in Silicon Carbide

M. Krieger ; K. Semmelroth ; H.B. Weber ; G. Pensl ; M. Rambach ; L. Frey

Pub. info.:	Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006. 556-557 pp.367-370, 2007. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	556-557

Conference Proceedings

7. (Nitrogen-Vacancy)-Complex Formation in SiC: Experiment and Theory

G. Pensl ; F. Schmid ; S.A. Reshanov ; H.B. Weber ; M. Bockstedte ; A. Mattausch ; O. Pankratov ; T. Ohshima ; H. Itoh

Pub. info.:	Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006. 556-557 pp.307-312, 2007. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	556-557

Conference Proceedings

8. Reduction of Implantation-Induced Point Defects by Germanium Ions in n-Type 4H-SiC

T. Sledziewski ; G. Ellrott ; W. Rösch ; H.B. Weber ; M. Krieger

Pub. info.:	Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France. pp.347-350, 2015. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	821-823

Conference Proceedings

9. Determination of the Electrical Capture Process of the EH₆-Center in n-Type 4H-SiC

J. Weber ; S. Beljakowa ; H.B. Weber ; G. Pensl ; B. Zippelius

Pub. info.:	Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation. pp.377-380, 2013. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	740-742

10.

Conference Proceedings

10. Graphene Ohmic Contacts to n-Type Silicon Carbide (0001)

S. Hertel ; A. Finkler ; M. Krieger ; H.B. Weber

Pub. info.:	Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France. pp.933-936, 2015. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	821-823

22 results

Select: Check all | Remove all

Sort order

10 | 50 | 100 / Per Page

Filtering by:

Author: H.B. Weber