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25 results

Conference Proceedings

1. The Ground Calibration of the Back-Side Illuminated CCD camera of X-ray Imaging Spectrometer (XIS) onboard Astro-E2 (Suzaku)

H. Yamaguchi ; H. Nakajima ; K. Koyama ; T.G. Tsuru ; H. Matsumoto ; H. Tsunemi ; K. Hayashida ; K. Torii ; M. Namiki ; S. Katsuda ; D. Matuura ; T. Miyauchi

Pub. info.:	Proceedings of the X-ray universe 2005, 26-30 September 2005, El Escorial, Madrid, Spain. pp.949-954, 2006. Noordwijk, Netherlands. ESA Publications Division
Title of ser.:	ESA SP
Ser. no.:	604

Conference Proceedings

2. Catalytic Current Based on Direct Electron Transfer Reactions of Enzymes Immobilized onto Carbon Nanotubes

M. Tominaga ; S. Kaneko ; S. Nomura ; S. Sakamoto ; H. Yamaguchi

Pub. info.:	Biological Nanostructures, Materials, and Applications. pp.1-8, 2009. Pennington, NJ. Electrochemical Society
Title of ser.:	ECS transactions
Ser. no.:	16(38)

Conference Proceedings

3. Effects of Surface Morphological Defects and Crystallographic Defects on Reliability of Thermal Oxides on C-Face

T. Suzuki ; H. Yamaguchi ; T. Hatakeyama ; H. Matsuhata ; J. Senzaki

Pub. info.:	Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA. pp.789-792, 2012. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	717-720

Conference Proceedings

4. Correlation between Surface Morphological Defects and Crystallographic Defects in SiC

T. Hatakeyama ; K. Ichinoseki ; H. Yamaguchi ; N. Sugiyama ; H. Matsuhata

Pub. info.:	Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA. pp.359-362, 2012. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	717-720

Conference Proceedings

5. Threading Dislocations in 4H-SiC Observed by Double-Crystal X-Ray Topography

H. Yamaguchi ; H. Matsuhata

Pub. info.:	Defects-recognition, imaging and physics in semiconductors XIV : selected, peer reviewed papers from the 14th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors, September 25-29, 2011, Miyazaki, Japan. pp.7-10, 2012. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	725

Conference Proceedings

6. TEM Observation of SiO2/4H-SiC Hetero Interface

H. Matsuhata ; J. Senzaki ; I. Nagai ; H. Yamaguchi

Pub. info.:	Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007. pp.671-674, 2009. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	600-603

Conference Proceedings

7. EBIC Analysis of Breakdown Failure Point in 4H-SiC PiN Diodes

T. Ohyanagi ; C. Bin ; T. Sekiguchi ; H. Yamaguchi ; H. Matsuhata

Pub. info.:	Silicon carbide and related materials 2008 : selected peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain. pp.707-710, 2009. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	615-617

Conference Proceedings

8. Contrast of Basal Plane and Threading Edge Dislocations in 4H-SiC by X-Ray Topography in Grazing Incidence Geometry

H. Matsuhata ; H. Yamaguchi ; I. Nagai ; T. Ohno ; R. Kosugi

Pub. info.:	Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007. pp.321-324, 2009. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	600-603

Conference Proceedings

9. Dislocation Contrast of 4H-SiC in X-Ray Topography under Weak-Beam Condition

H. Yamaguchi ; H. Matsuhata ; I. Nagai

Pub. info.:	Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007. pp.313-316, 2009. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	600-603

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Conference Proceedings

10. Observation of Misfit Dislocations Introduced by Epi-Layer Growth on 4H-SiC

H. Matsuhata ; H. Yamaguchi ; I. Nagai ; T. Ohno ; R. Kosugi

Pub. info.:	Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007. pp.309-312, 2009. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	600-603

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Author: H. Yamaguchi