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16 results

Conference Proceedings

1. Model Calculations of SiC Oxide Growth Rates at Sub-Atmospheric Pressures Using the Si and C Emission Model

Y. Hijikata ; S. Yagi ; H. Yaguchi ; S. Yoshida

Pub. info.:	Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation. pp.833-836, 2013. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	740-742

Conference Proceedings

2. Photoluminescence Study of Oxidation-Induced Stacking Faults in 4H-SiC Epilayers

Y. Miyano ; S. Yagi ; Y. Hijikata ; H. Yaguchi

Pub. info.:	Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France. pp.327-330, 2015. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	821-823

Conference Proceedings

3. Surface Orientation Dependence of SiC Oxidation Process Studied by In Situ Spectroscopic Ellipsometry

D. Goto ; S. Yagi ; Y. Hijikata ; H. Yaguchi

Pub. info.:	Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France. pp.371-374, 2015. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	821-823

Conference Proceedings

4. Oxygen-Partial-Pressure Dependence of SiC Oxidation Rate Studied by In Situ Spectroscopic Ellipsometry

T. Yamamoto ; Y. Hijikata ; H. Yaguchi ; S. Yoshida

Pub. info.:	Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007. pp.667-670, 2009. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	600-603

Conference Proceedings

5. Model Calculation of SiC Oxidation Rates in the Thin Oxide Regime

Y. Hijikata ; T. Yamamoto ; H. Yaguchi ; S. Yoshida

Pub. info.:	Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007. pp.663-666, 2009. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	600-603

Conference Proceedings

6. Model Calculation of SiC Oxide Growth Rate Based on the Silicon and Carbon Emission Model

Y. Hijikata ; H. Yaguchi ; S. Yoshida

Pub. info.:	Silicon carbide and related materials 2008 : selected peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain. pp.489-492, 2009. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	615-617

Conference Proceedings

7. Characterization of 4H-SiC-SiO2 Interfaces by a Deep Ultraviolet Spectroscopic Ellipsometer

H. Seki ; T. Wakabayashi ; Y. Hijikata ; H. Yaguchi ; S. Yoshida

Pub. info.:	Silicon carbide and related materials 2008 : selected peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain. pp.505-508, 2009. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	615-617

Conference Proceedings

8. Observation of SiC Oxidation in Ultra-Thin Oxide Regime by In Situ Spectroscopic Ellipsometry

T. Takaku ; Y. Hijikata ; H. Yaguchi ; S. Yoshida

Pub. info.:	Silicon carbide and related materials 2008 : selected peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain. pp.509-512, 2009. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	615-617

Conference Proceedings

9. Theoretical Studies for Si and C Emission into SiC Layer during Oxidation

Y. Hijikata ; H. Yaguchi ; S. Yoshida

Pub. info.:	Silicon Carbide and Related Materials 2010 : Selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd. pp.429-432, 2011. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	679-680

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Conference Proceedings

10. The Effects of Nb Carbo-Nitride Precipitation Conditions on Abnormal Grain Growth in Nb Added Steels

T. Murakami ; H. Hatano ; Y. Shindo ; M. Nagahama ; H. Yaguchi

Pub. info.:	THERMEC 2006 : supplement to THERMEC 2006, 5th International conference on processing and manufacturing of advanced materials, July 4-8, 2006, Vancouver, Canada. 539-543 pp.4167-4172, 2007. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	539-543(5)

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Author: H. Yaguchi