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51 results

Conference Proceedings

1. Dynamical Simulation of SiO2/4H-SiC(0001) Interface Oxidation Process: from First-Principles

T. Ohnuma ; A. Miyashita ; M. Iwasawa ; M. Yoshikawa ; H. Tsuchida

Pub. info.:	Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006. pp.615-620, 2007. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	556-557

Conference Proceedings

2. Reduction of Traps and Improvement of Carrier Lifetime in SiC Epilayer by Ion Implantation

L. Storasta ; H. Tsuchida

Pub. info.:	Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006. pp.603-606, 2007. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	556-557

Conference Proceedings

3. Generation of Amorphous SiO2/SiC Interface Structure by the First-Principles Molecular Dynamics Simulation

A. Miyashita ; T. Ohnuma ; M. Iwasawa ; H. Tsuchida ; M. Yoshikawa

Pub. info.:	Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006. pp.521-524, 2007. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	556-557

Conference Proceedings

4. Development of High Growth Rate SiC Epi-Reactor with Controlled Thermal Gradient

M. Ito ; H. Tsuchida ; I. Kamata ; L. Storasta

Pub. info.:	Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006. pp.81-84, 2007. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	556-557

Conference Proceedings

5. Advances in Fast Epitaxial Growth of 4H-SiC and Defect Reduction

H. Tsuchida ; I. Kamata ; M. Ito ; T. Miyazawa ; H. Uehigashi

Pub. info.:	Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy. pp.119-124, 2016. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	858

Conference Proceedings

6. Low Resistivity, Thick Heavily Al-Doped 4H-SiC Epilayers Grown by Hot-Wall Chemical Vapor Deposition

S.Y. Ji ; K. Kojima ; Y. Ishida ; H. Tsuchida ; S. Yoshida

Pub. info.:	Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation. pp.181-184, 2013. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	740-742

Conference Proceedings

7. Ion-Induced Anomalous Charge Collection Mechanisms in SiC Schottky Barrier Diodes

T. Makino ; M. Deki ; S. Onoda ; N. Hoshino ; H. Tsuchida

Pub. info.:	Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France. pp.575-578, 2015. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	821-823

Conference Proceedings

8. Three-Dimensional Imaging of Extended Defects in 4H-SiC

R. Tanuma ; M. Nagano ; I. Kamata ; H. Tsuchida

Pub. info.:	Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy. pp.361-366, 2016. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	858

Conference Proceedings

9. Three-Dimensional Imaging of Extended Defects in 4H-SiC by Two-Photon-Excited Band-Edge Photoluminescence

R. Tanuma ; H. Tsuchida

Pub. info.:	Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France. pp.343-346, 2015. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	821-823

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Conference Proceedings

10. Epitaxial Layer Thickness Dependence on Heavy Ion Induced Charge Collection in 4H-SiC Schottky Barrier Diodes

T. Makino ; S. Onoda ; N. Hoshino ; H. Tsuchida ; T. Ohshima

Pub. info.:	Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy. pp.753-756, 2016. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	858

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Author: H. Tsuchida