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12 results

Conference Proceedings

1. Interface Properties of SiO2/4H-SiC(0001) with Large Off-Angles Formed by N2O Oxidation

H. Saitoh ; A. Seki ; A. Manabe ; T. Kimoto

Pub. info.:	Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006. pp.659-662, 2007. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	556-557

Conference Proceedings

2. Diffusion and Gettering of Transition Metals in 4H-SiC

K. Danno ; H. Saitoh ; A. Seki ; T. Shirai ; H. Suzuki

Pub. info.:	Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA. pp.225-228, 2012. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	717-720

Conference Proceedings

3. Influence of Substitutional Atoms on the Solubility Limit of Carbon in B.c.c. Iron

H. Saitoh ; K. Ushioda ; N. Yoshinaga

Pub. info.:	THERMEC 2011 : International Conference on Processing & Manufacturing of Advanced Materials : processing, fabrication, properties, applications, August 1-5, 2011, Quebec City, Canada. pp.2348-2353, 2012. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	706-709

Conference Proceedings

4. Dislocation Revelation in Highly Doped N-Type 4H-SiC by Molten KOH Etching with Na₂O₂ Additive

Y.Z. Yao ; Y. Ishikawa ; Y. Sugawara ; H. Saitoh ; K. Danno

Pub. info.:	Silicon Carbide and Related Materials 2010 : Selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd. pp.290-293, 2011. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	679-680

Conference Proceedings

5. Dislocation Analysis in Highly Doped n-Type 4H-SiC by Using Electron Beam Induced Current and KOH+Na₂O₂ Etching

Y.Z. Yao ; Y. Sugawara ; Y. Ishikawa ; H. Saitoh ; K. Danno

Pub. info.:	Silicon Carbide and Related Materials 2010 : Selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd. pp.294-297, 2011. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	679-680

Conference Proceedings

6. High-Speed Growth of High-Quality 4H-SiC Bulk by Solution Growth Using Si-Cr Based Melt

K. Danno ; H. Saitoh ; A. Seki ; H. Daikoku ; Y. Fujiwara

Pub. info.:	Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009. pp.13-16, 2010. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	645-648

Conference Proceedings

7. Room-Temperature Environmental Embrittlement and Electrochemical Behavior of C0₃Ti Intermetallic Compounds

T. Misawa ; A. Kimura ; H. Saitoh ; H. Tanabe ; H. Izumi

Pub. info.:	Proceedings of the symposium on corrosion, electrochemistry, and catalysis of metastable metals and intermetallics. pp.284-295, 1993. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	1993-30

Conference Proceedings

8. Observation of Hydrogen Distribution in a Eutectic Mg-Ni Alloy by the Silver Decoration Method

H. Saitoh ; M. Shimpo

Pub. info.:	PRICM 7 : selected peer review papers from the seventh Pacific Rim International Conference on Advanced Materials and Processing, August 2-6, 2010, Cairns, Australia. pp.2859-2862, 2010. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	654-656

Conference Proceedings

9. Characterization of Surface Defects of Highly N-Doped 4H-SiC Substrates that Produce Dislocations in the Epitaxial Layer

Y. Ishikawa ; Y. Sugawara ; H. Saitoh ; K. Danno ; Y. Kawai

Pub. info.:	Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009. pp.351-354, 2010. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	645-648

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Conference Proceedings

10. Evaluation and Control of Strain in Si Induced by Patterned SiN Stressor

H. Saitoh ; D. Kosemura ; Y. Kakemura ; T. Yoshida ; M. Takei

Pub. info.:	Dielectrics for nanosystems 3: materials science, processing, reliability, and manufacturing. pp.263-269, 2008. Pennington, N.J.. Electrochemical Society
Title of ser.:	ECS transactions
Ser. no.:	13(2)

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Author: H. Saitoh