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27 results

Conference Proceedings

1. Rapid Imaging of Carrier Density of Si Using Reflectance Measurement in the Terahertz Region

A. Hamano ; Y. Takatsu ; S. Ohno ; H. Minamide ; H. Ito

Pub. info.:	Defects-recognition, imaging and physics in semiconductors XIV : selected, peer reviewed papers from the 14th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors, September 25-29, 2011, Miyazaki, Japan. pp.227-230, 2012. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	725

Conference Proceedings

2. Nondestructive Measurement of Carrier Density in GaAs Using Relative Reflectivity of Two Terahertz Waves

A. Hamano ; S. Ohno ; H. Minamide ; H. Ito ; Y. Usuki

Pub. info.:	Defects-recognition, imaging and physics in semiconductors XIV : selected, peer reviewed papers from the 14th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors, September 25-29, 2011, Miyazaki, Japan. pp.109-112, 2012. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	725

Conference Proceedings

3. Rapid Terahertz Imaging of Carrier Density of 3C-SiC

A. Hamano ; S. Ohno ; H. Minamide ; H. Ito ; Y. Usuki

Pub. info.:	Defects-recognition, imaging and physics in semiconductors XIV : selected, peer reviewed papers from the 14th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors, September 25-29, 2011, Miyazaki, Japan. pp.57-60, 2012. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	725

Conference Proceedings

4. Fast 4H-SiC Epitaxial Growth on 150 mm Diameter Area with High-Speed Wafer Rotation

H. Fujibayashi ; M. Ito ; H. Ito ; I. Kamata ; M. Naito

Pub. info.:	Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan. pp.117-120, 2014. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	778-780

Conference Proceedings

5. Simulation Study of High-Speed Wafer Rotation Effects in a Vertical Reactor for 4H-SiC Epitaxial Growth on 150 mm Substrates

M. Ito ; H. Fujibayashi ; H. Ito ; I. Kamata ; M. Naito

Pub. info.:	Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan. pp.171-174, 2014. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	778-780

Conference Proceedings

6. Ignition Limit of Overloaded Electric Wire in Microgravity

Y. Takano ; O. Fujita ; H. Ito ; Y. Nakamura

Pub. info.:	The 5th IAASS Conference ‘A safer space for a safer world' : 17–19 October 2011,Versailles, France. 2012. Noordwijk, The Netherlands. ESA Communications
Title of ser.:	ESA SP
Ser. no.:	699

Conference Proceedings

7. Dislocation Analysis of 4H-SiC Using KOH Low Temperature Etching

T. Sato ; Y. Suzuki ; H. Ito ; T. Isshiki ; M. Fukui

Pub. info.:	Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan. pp.358-361, 2014. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	778-780

Conference Proceedings

8. High-Sensitivity High-Resolution Full-Wafer Imaging of the Properties of Large n-Type SiC Using the Relative Reflectance of Two Terahertz Waves

A. Hamano ; S. Ohno ; H. Minamide ; H. Ito ; Y. Usuki

Pub. info.:	Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan. pp.491-494, 2014. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	778-780

Conference Proceedings

9. Leakage Current Characteristics of Ultra-Shallow Junctions Formed by B₂H₆ Plasma Doping

H. Sauddin ; Y. Sasaki ; H. Ito ; B. Mizuno ; P. Ahmet ; K. Kakushima ; N. Sugii ; K. Tsutsui ; H. Iwai

Pub. info.:	Advanced gate stack, source/drain and channel engineering for Si-based CMOS 2: new materials, processes, and equipment. pp.57-66, 2006. Pennington, NJ. Electrochemical Society
Title of ser.:	ECS transactions
Ser. no.:	3(2)

10.

Conference Proceedings

10. High-coverage barrier-film formation by ionized cluster beam

H. Ishii ; Y. Hashimoto ; H. Tsukazaki ; M. Hanai ; H. Ito

Pub. info.:	Microelectronics manufacturability, yield, and reliability : 20-21 October 1994, Austin, Texas. pp.52-61, 1994. Bellingham, WA. Society of Photo-optical Instrumentation Engineers
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	2334

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Author: H. Ito