1.

Conference Proceedings
Conference Proceedings
1. Characterization of Nanometer-Sized ZnO by Raman and Cathodoluminescence Spectroscopies
K. Inoue ; T. Nakagawa ; M. Yoshikawa ; N. Hasuike ; H. Harima
Pub. info.: Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007.  pp.1357-1360,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 600-603
2.

Conference Proceedings
Conference Proceedings
2. Correlation between Screw Dislocations Distribution and Cathodoluminescence Spectra of InGaN Single Quantum Well Films
T. Fujita ; T. Mitani ; M. Murakami ; M. Yoshikawa ; H. Harima
Pub. info.: Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007.  pp.1309-1312,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 600-603
3.

Conference Proceedings
Conference Proceedings
3. Deep UV Raman Spectroscopy of Epitaxial Graphenes on Vicinal 6H-SiC Substrates
S. Kamoi ; N. Hasuike ; K. Kisoda ; H. Harima ; K. Morita
Pub. info.: Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009.  pp.611-614,  2010.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 645-648
4.

Conference Proceedings
Conference Proceedings
4. Multi-Wavelength Raman and HRTEM Study of Ni/Si Interface after NiSi Formation at Low Temperatures using Various Heating Methods
T. Sasaki ; H. Minami ; H. Harima ; T. Isshiki ; M. Yoshimoto
Pub. info.: Advanced gate stack, source/drain and channel engineering for Si-based CMOS 4 : new materials, processes and equipment.  pp.405-412,  2008.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 13(1)