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Conference Proceedings

1. High-Speed Growth of 4H-SiC Single Crystal Using Si-Cr Based Melt

M. Kado ; H. Daikoku ; H. Sakamoto ; H. Suzuki ; T. Bessho

Pub. info.:	Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation. pp.73-76, 2013. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	740-742

Conference Proceedings

2. Top-Seeded Solution Growth of 4H-SiC Bulk Crystal Using Si-Cr Based Melt

H. Daikoku ; M. Kado ; H. Sakamoto ; H. Suzuki ; T. Bessho

Pub. info.:	Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA. pp.61-64, 2012. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	717-720

Conference Proceedings

3. High-Speed Growth of High-Quality 4H-SiC Bulk by Solution Growth Using Si-Cr Based Melt

K. Danno ; H. Saitoh ; A. Seki ; H. Daikoku ; Y. Fujiwara

Pub. info.:	Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009. pp.13-16, 2010. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	645-648