1.

Conference Proceedings
Conference Proceedings
1. The Influence of Fluorine on Various MOS Devices
Innertsberger, G. ; Jurk, R. ; Felsner, J. ; Kakoschke, R. ; Yuwono, B. ; Schlosser, T. ; Krautschneider, W. ; Gschwandtner, A.
Pub. info.: Ultrathin SiO[2] and high-K materials for USLI gate dielectrics : symposium held April 5-8, 1999, in San Francisco, California, U.S.A..  pp.589-,  1999.  Warrendale, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 567
2.

Conference Proceedings
Conference Proceedings
2. Single Wafer CVD of Silicon Nitride for CMOS Gate Applications
Pomarede, C. ; Werkhoven, C. ; Weidmann, J. ; Bergman, T. ; Gschwandtner, A. ; Houssa, M.
Pub. info.: Ultrathin SiO[2] and high-K materials for USLI gate dielectrics : symposium held April 5-8, 1999, in San Francisco, California, U.S.A..  pp.147-,  1999.  Warrendale, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 567
3.

Conference Proceedings
Conference Proceedings
3. Gate-Prior-to-Isolation CMOS Technology With Through-the-Gate-Implanted Ultrathin Gate Oxides
Schwalke, U. ; Gruensfelder, C. ; Gschwandtner, A. ; Innertsberger, G. ; Kerber, M.
Pub. info.: Ultrathin SiO[2] and high-K materials for USLI gate dielectrics : symposium held April 5-8, 1999, in San Francisco, California, U.S.A..  pp.597-,  1999.  Warrendale, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 567