1.

Conference Proceedings
Conference Proceedings
1. Reaction of Excess Silicon Interstitials in the Presence of Arsenic and Germanium
Brindos, R. ; Keys, P.H. ; Griglione, M. ; Jones, K. S. ; Law, M. E. ; Agarwal, Aditya ; Andideh, Ebrahim
Pub. info.: Si front-end processing - physics and technology of dopant-defect interactions II : symposium held April 24-27, 2000, San Francisco, California, U.S.A..  pp.B8.4-,  2001.  Warrendale, PA.  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 610
2.

Conference Proceedings
Conference Proceedings
2. Exploring Alternative Annealing Methods for Shallow Junction Formation in Ion Implanted Silicon
Jones, K.S. ; Banisaukis, H. ; Earles, S. ; Lindfors, C. ; Griglione, M. ; Law, M.E. ; Taiwar, S. ; Falk, S.W. ; Downey, D.F. ; Agarwal, A.
Pub. info.: Rapid thermal and other short-time processing technologies : proceedings of the international symposium.  pp.119-128,  2000.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2000-9
3.

Conference Proceedings
Conference Proceedings
3. Influence of Arsenic Clustering and Precipitation on the Interstitial and Vacancy Concentration in Silicon
Brindos, R. ; Clark, M.H. ; Jones, K.S. ; Griglione, M. ; Gossmann, Hans-J. ; Agarwal, A. ; Murto, B. ; Andideh, E.
Pub. info.: Si front-end processing -- physics and technology of dopant-defect interactions III : symposium held April 17-19, 2001, San Francisco, California, U.S.A..  2001.  Warrendale, PA.  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 669