1.

Conference Proceedings
Conference Proceedings
1. Optical Characterization of InGaN Layers and GaN/InGaN/GaN Double Heterostructures
Graber,A. ; Averbeck,R. ; Barnhofer,U. ; Riechert,H. ; Tews,H.
Pub. info.: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part2  pp.1311-1314,  1998.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 264-268
2.

Conference Proceedings
Conference Proceedings
2. The Effective Mass Donor in Galliumnitride
Alt,H.C. ; Meye,B.K. ; Volm,D. ; Graber,A. ; Drechsler,M. ; Hofmann,D.M. ; Detchprohlm,T. ; Amano,A. ; Akasaki,I.
Pub. info.: Proceedings of the 18th International Conference on Defects in Semiconductors : ICDS-18, Sendai, Japan, July 23-28, 1995.  pp.17-22,  1995.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 196-201
3.

Conference Proceedings
Conference Proceedings
3. GaN-based LEDs grown by molecular beam epitaxy (Invited Paper)
Averbeck,R. ; Graber,A. ; Tews,H. ; Bernklau,D. ; Barnhofer,U. ; Riechert,H.
Pub. info.: Light-Emitting Diodes: Research, Manufacturing, and Applications II.  pp.28-35,  1998.  Bellingham, Wash..  SPIE-The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 3279