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13 results

Conference Proceedings

1. Hydride vapor phase epitaxy of gallium nitride films for quasi-bulk substrates

Molnar, R.J. ; Gotz, W. ; Romano, L.T. ; Johnson, N.M.

Pub. info.:	Proceedings of the First Symposium on III-V Nitride Materials and Processes. pp.212-234, 1996. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	96-11

Conference Proceedings

2. Spectroscopic Identification of the Acceptor-Hydrogen Complex in Mg-Doped GaN Grown by MOCVD

Gotz, W. ; McCluskey, M. D. ; Johnson, N. M. ; Bour, D. P. ; Haller, E. E.

Pub. info.:	Gallium nitride and related materials II : symposium held April 1-4, 1997, San Francisco, California, U.S.A.. pp.117-, 1997. Pittsburgh, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	468

Conference Proceedings

3. Thickness Dependence of Electronic Properties of GaN Epilayers

Gotz, W. ; Walker, J. ; Romano, L. T. ; Johnson, N. M. ; Molnar, R. J.

Pub. info.:	III-V nitrides : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A.. pp.525-, 1997. Pittsburgh, PA. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	449

Conference Proceedings

4. Characterization of OMVPE-Grown AlGaInN Heterostructures

Bour, D. P. ; Chung, H. F. ; Gotz, W. ; Romano, L. ; Krusor, B. S. ; Hofstetter, D. ; Rudaz, S. ; Kuo, C. P. ; Ponce, F. A. ; Johnson, N. M. ; Craford, M. G. ; Bringans, R. D.

Pub. info.:	III-V nitrides : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A.. pp.509-, 1997. Pittsburgh, PA. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	449

Conference Proceedings

5. Optoelectronic and Structural Properties of High-Quality GaN Grown by Hydride Vapor Phase Epitaxy

Molnar, R. J. ; Aggarwal, R. ; Liau, Z-L. ; Brown, E. R. ; Melngailis, I. ; Gotz, W. ; Romano, L. T. ; Johnson, N. M.

Pub. info.:	Gallium nitride and related materials : the First International Symposium on Gallium Nitride and Related Materials held November 27-December 1, 1995, Boston, Massachusetts, U.S.A.. pp.189-, 1996. Pittsburgh, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	395

Conference Proceedings

6. Gallium Nitride Thick Films Grown by Hydride Vapor Phase Epitaxy

Molnar, R. J. ; Maki, P. ; Aggarwal, R. ; Liau, Z. L. ; Brown, E. R. ; Melngailis, I. ; Gotz, W. ; Romano, L. T. ; Johnson, N. M.

Pub. info.:	III-Nitride, SiC, and Diamond Materials for Electronic Devices : symposium held April, 1996, San Francisco, California, U.S.A.. pp.221-, 1996. Pittsburgh, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	423

Conference Proceedings

7. Activation of Acceptors in Mg-Doped, p-Type GaN

Gotz, W. ; Johnson, N. M. ; Walker, J. ; Bour, D. P.

Pub. info.:	III-Nitride, SiC, and Diamond Materials for Electronic Devices : symposium held April, 1996, San Francisco, California, U.S.A.. pp.595-, 1996. Pittsburgh, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	423

Conference Proceedings

8. Hydrogen in GaN

Johnson, N. M. ; Gotz, W. ; Neugebauer, J. ; Wall, C. G. Van de

Pub. info.:	Gallium nitride and related materials : the First International Symposium on Gallium Nitride and Related Materials held November 27-December 1, 1995, Boston, Massachusetts, U.S.A.. pp.723-, 1996. Pittsburgh, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	395

Conference Proceedings

9. Shallow dopants and the role of hydrogen in epitaxial layers of Gallium Nitride (GaN)

Gotz, W. ; Johson, N.M. ; Bour, D.P. ; Chen, C. ; Liu, H. ; Imler, W.

Pub. info.:	Proceedings of the First Symposium on III-V Nitride Materials and Processes. pp.87-99, 1996. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	96-11

10.

Conference Proceedings

10. Shallow and Deep Level Defects in GaN

Gotz, W. ; Johnson, N. M. ; Bour, D. P. ; Chen, C. ; Liu, H. ; Kuo, C. ; Imler, W.

Pub. info.:	Gallium nitride and related materials : the First International Symposium on Gallium Nitride and Related Materials held November 27-December 1, 1995, Boston, Massachusetts, U.S.A.. pp.443-, 1996. Pittsburgh, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	395

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Author: Gotz, W.