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13 results

Conference Proceedings

1. Hydrogen-Induced Blistering of SiC : The Role of Post-Implant Multi-Step Annealing Sequences

Malouf, G. ; Poust, B. ; Hayashi, S. ; Yoshizawa, G. ; Goorsky, M.S.

Pub. info.:	Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005. pp.855-858, 2006. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	527-529

Conference Proceedings

2. THE SYNTHESIS AND STABILITY OF Si1-y Cy ALLOYS AND STRAINED LAYER SUPERLATTICES

Iyer, S.S. ; Eberl, K. ; Goorsky, M.S. ; Legoues, F.K. ; Cardone, F. ; Ek, B.A.

Pub. info.:	Silicon molecular beam epitaxy : symposium held April 29-May 3, 1991, Anaheim, California, U.S.A.. pp.581-588, 1991. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	220

Conference Proceedings

3. Comparison between Measurement Techniques Used for Determination of the Micropipe Density in SiC Substrates

Emorhokpor, E. ; Carlson, E. ; Wan, J. ; Weber, A. ; Basceri, C. ; Jenny, J.R. ; Sandhu, R. ; Oliver, J.D. ; Burkeen, F. ; Somanchi, A. ; Velidandla, V. ; Orazio, F. ; Blew, A. ; Goorsky, M.S. ; Dudley, M.

Pub. info.:	Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005. pp.443-446, 2006. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	527-529

Conference Proceedings

4. STRAIN RELAXATION IN EPITAXIAL HETEROSTRUCTURES: SENSITIVITY OF HIGH RESOLUTION X-RAY DIFFRACTION

Goorsky, M.S. ; Horng, S.T. ; Stiffler, S.R. ; Stanis, C.S.

Pub. info.:	Evolution of surface and thin film microstructure : symposium held November 30-December 4, 1992, Boston, Massachusetts, U.S.A.. pp.415-420, 1993. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	280

Conference Proceedings

5. THE HIGH TEMPERATURE STABILITY AND RELAXATION OF UHV/CVD SiGe THIN FILMS

Stiffler, S.R. ; Stanis, C.L. ; Goorsky, M.S. ; Chan, K.K.

Pub. info.:	Evolution of surface and thin film microstructure : symposium held November 30-December 4, 1992, Boston, Massachusetts, U.S.A.. pp.471-474, 1993. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	280

Conference Proceedings

6. GROWTH AND CHARACTERIZATION OF HIGHLY OXYGEN-DOPED GaAs

Goorsky, M.S. ; Kuech, T.F. ; Mooney, P.M. ; Cardone, F. ; Potemski, R.

Pub. info.:	Chemical perspectives of microelectronic materials II : symposium held November 26-28, 1990, Boston, Massachusetts, U.S.A.. pp.177-182, 1991. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	204

Conference Proceedings

7. Effects of Strain Relaxation on the Carrier Transport Properties on InP-based Pseudomorphic High Electron Mobility Structures

Sandhu, R.S. ; Moore, C.D. ; Goorsky, M.S. ; Wong, L. ; Wang, K.L. ; Jiang, H. ; Chin, T.P. ; Wojtowicz, M. ; Block, T.R. ; Streit, D.C.

Pub. info.:	Proceedings of the State-of-the-Art Program on Compound Semiconductors (SOTAPOCs XXX). pp.146-154, 1999. Pennington, N. J.. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	99-4

Conference Proceedings

8. PHOTOLUMINESCENCE EXCITATION SPECTROSCOPY (PLE) OF POROUS SILICON

Wang, Lei ; Wilson, M.T. ; Goorsky, M.S. ; Haegel, N.M.

Pub. info.:	Light emission from silicon : symposium held December 3-5, 1991, Boston, Massachusetts, U.S.A.. pp.73-76, 1992. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	256

Conference Proceedings

9. Misfit Dislocation Nucleation Study in P/P + Si

Feichtinger, P. ; Goorsky, M.S. ; Oster, D. ; D'Silva, T. ; Moreland, J.

Pub. info.:	High Purity Silicon VI : proceedings of the sixth International Symposium. pp.136-144, 2000. Bellingham, Wash.. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2000-17

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Conference Proceedings

10. SELECTIVE EPITAXY OF AlXGa1-XAs AND AlXGa1-XAs BASED STRUCTURES

Goorsky, M.S. ; Kuech, T.F. ; Potemski, R.

Pub. info.:	In-situ patterning : selective area deposition and etching : symposium held November 29-December 1, 1989, Boston, Massachusetts, U.S.A.. pp.351-356, 1990. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	158

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Author: Goorsky, M.S.