1.

Conference Proceedings
Conference Proceedings
1. From radiation induced leakage current to soft breakdown in irradiated MOS devices with ultrathin gate oxide
Ceschia, M. ; Paccagnella, A. ; Cester, A. ; Ghidini, G. ; Wyss, J.
Pub. info.: Structure and electronic properties of ultrathin dielectric films on silicon and related structures : symposium held November 29-December 1, 1999, Boston, Massachusetts, U.S.A..  pp.201-,  2000.  Warrendale, PA.  MRS-Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 592
2.

Conference Proceedings
Conference Proceedings
2. Characterization of nitrided silicon-silicon dioxide interfaces
Polignano, M. L. ; Alessandri, M. ; Brazzelli, D. ; Crivelli, B. ; Ghidini, G. ; Zonca, R. ; Caricato, A. P. ; Bersani, M. ; Sbetti, M. ; Vanzetti, L. ; Xing, G. C. ; Miner, G. E. ; Astici, N. ; Kuppurao, S. ; Lopes, D.
Pub. info.: Nondestructive methods for materials characterization : symposium held November 29-30, 1999, Boston, Massachusetts, U.S.A..  pp.207-,  2000.  Warrendale, Pa..  MRS-Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 591
3.

Conference Proceedings
Conference Proceedings
3. Physical-Chemical Evolution of Hf-Aluminates Upon Thermal Treatments
Crivelli, B. ; Alessandri, M. ; Alberici, S. ; Brazzelli, D. ; Elbaz, A. C. ; Frabboni, S. ; Ghidini, G. ; Maes, J. W. ; Ottaviani, G. ; Pavia, G. ; Wiemer, C.
Pub. info.: CMOS front-end materials and process technology : symposium held April 22-24, 2003, San Francisco, California, U.S.A..  pp.65-72,  2003.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 765
4.

Conference Proceedings
Conference Proceedings
4. Electrical Characterization of Highly Reliable 80Å Oxide
Ghidini, G. ; Alessandri, M. ; Clementi, C. ; Drera, D.
Pub. info.: The physics and chemistry of SiO[2] and the Si-SiO[2] interface-3, 1996 : proceedings of the Third International Symposium on the Physics and Chemistry of SiO[2] and the Si-SiO[2] Interface.  pp.645-656,  1996.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 96-1
5.

Conference Proceedings
Conference Proceedings
5. A New Methodology for a Statistical Evaluation of SILC: Characterization of Stress Conditions and Oxide Technology
Ghidini, G. ; Rigamonti, M. ; Brazelli, D. ; Pellizzer, F. ; Martinelli, A. ; Galbiati, N.
Pub. info.: The physics and chemistry of SiO2 and the Si-SiO2 interface-4, 2000 : proceedings of the fourth International Symposium on the Physics and Chemistry of SiO2 and the Si-SiO2 Interface, Tronto, Canada, May 15-18, 2000.  pp.353-364,  2000.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2000-2