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14 results

Conference Proceedings

1. Characterization and modeling of Defects in High-k Layers Through Fast Electrical Transient Measurements

Mitard, J. ; Leroux, C. ; Reimbold, G. ; Garros, X. ; Martin, F. ; Ghibaudo, G.

Pub. info.:	Defects in high-κ gate dielectric stacks : nano-electronic semiconductor devices. pp.73-85, 2006. Dordrecht. Springer
Title of ser.:	NATO science series. Series 2, Mathematics, physics and chemistry
Ser. no.:	220

Conference Proceedings

2. Modeling and Electrical Characterization of MOS Structures with Ultra-Thin Gate Oxide

Clerc, R. ; Ghibaudo, G.

Pub. info.:	Silicon nitride and silicon dioxide thin insulating films VII : proceedings of the international symposium. pp.551-572, 2003. Pennington, N.J.. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2003-2

Conference Proceedings

3. Impact of quantum-mechanical effects on the double-gate MOSFET characteristics

Dauge, F. ; Jomaah, J. ; Ghibaudo, G.

Pub. info.:	Silicon-on-insulator technology and devices XI : proceedings of the international symposium. pp.383-388, 2003. Pennington, N.J.. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2003-5

Conference Proceedings

4. Comparison Between the Cryogenic Behaviour of Deep Submicron Bulk Si and SOI CMOS Devices

Balestra, F. ; Ghibaudo, G.

Pub. info.:	Proceedings of the fourth Symposium on Low Temperature Electronics and High Temperature Superconductivity. pp.171-186, 1997. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	97-2

Conference Proceedings

5. Evaluation and Comparison of Various Silicon-On-Sapphire (SOS) Materials using the Pseudo-MOSFET Technique

Hefyene, N. ; Cristoloveanu, S. ; Ghibaudo, G. ; Matsui, M. ; Yasujima, A.

Pub. info.:	Silicon-on-Insulator Technology and Devices X : proceedings of the tenth International Symposium. pp.133-138, 2001. Pennington, N.J.. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2001-3

Conference Proceedings

6. Characterization and modeling of low-frequency noise in sub-0.1 -pm SiGe pMOSFETs

Romanjek, K. ; Chroboczek, J. A. ; Ghibaudo, G. ; Ernst, T.

Pub. info.:	Noise in devices and circuits II : 26-28 May 2004, Maspalomas, Gran Canaria, Spain. pp.496-506, 2004. Bellingham, Wash.. SPIE - The International Society of Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	5470

Conference Proceedings

7. Direct extraction of McWhorter's constant from LFN spectra of MOSFETs with planar layers of Si nanocrystals embedded in gate SiO2

Ferraton, S. ; Zimmermann, J. ; Montres, L. ; Ghibaudo, G. ; Brini, J. ; Gurgul, J. ; Chroboczek, J. A.

Pub. info.:	Noise in devices and circuits II : 26-28 May 2004, Maspalomas, Gran Canaria, Spain. pp.560-565, 2004. Bellingham, Wash.. SPIE - The International Society of Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	5470

Conference Proceedings

8. ELECTRICAL ACTIVATION OF HEAVILY DOPED ARSENIC IMPLANTED SILICON

Said, J. ; Jaouen, H. ; Ghibaudo, G. ; Stoemenos, I. ; Zaumseil, P.

Pub. info.:	Processing and characterization of materials using ion beams : symposium held November 28-December 2, 1988, Boston, Massachusetts, U.S.A.. pp.599-604, 1989. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	128

Conference Proceedings

9. DEFECTS CHARACTERIZATION OF ARSENIC IMPLATED SILICON BY AC HALL EFFECT MEASUREMENTS

Jaouen, H. ; Ghibaudo, G. ; Christofides, C.

Pub. info.:	Materials issues in silicon integrated circuit processing : symposium held April 15-18, 1986, Palo Alto, California, U.S.A.. pp.167-172, 1986. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	71

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Conference Proceedings

10. *Challenges in interface trap characterization of deep sub-micron MOS devices using charge pumping techniques

Autran, J. L. ; Masson, P. ; Ghibaudo, G.

Pub. info.:	Structure and electronic properties of ultrathin dielectric films on silicon and related structures : symposium held November 29-December 1, 1999, Boston, Massachusetts, U.S.A.. pp.275-, 2000. Warrendale, PA. MRS-Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	592

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