1.

Conference Proceedings
Conference Proceedings
1. COMPREHENSIVE INVESTIGATION OF TRAPS IN GaAs/A1GaAs HETEROSTRUCTURES AND SUPERLATTICES IN DLTS
Papaioannou, G. ; Kiriakidis, G. ; Georgakilas, A. ; Christou, A.
Pub. info.: Advances in materials, processing, and devices in III-V compound semiconductors.  pp.151-156,  1989.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 144
2.

Conference Proceedings
Conference Proceedings
2. ON THE ORIGIN OF THE CONTRAST INHOMOGENEITIES FOUND ON In0.52Al0.48As LAYERS GROWN ON InP SUBSTRATES AT HIGH TEMPERATURES
Peiro, F. ; Cornet, A. ; Morante, J.R. ; Georgakilas, A.
Pub. info.: Semiconductor heterostructures for photonic and electronic applications : symposium held November 30-December 4, 1992, Boston, Massachusetts, U.S.A..  pp.133-140,  1993.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 281
3.

Conference Proceedings
Conference Proceedings
3. INFLUENCE OF THE GROWTH TEMPERATURE ON THE PRESENCE OF COMPOSITION INHOMOGENEITIES IN In0.52A10.48 AS LAYERS GROWN BY MBE ON InP SUBSTRATES
Peiro, F. ; Cornet, A. ; Herms, A. ; Morante, J. R. ; Georgakilas, A. ; Halkias, G.
Pub. info.: Mechanisms of Heteroepitaxial growth : symposium held April 27-30, 1992, San Francisco, California, U.S.A..  pp.101-106,  1992.  Pittsburgh, PA.  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 263
4.

Conference Proceedings
Conference Proceedings
4. DEPENDENCE OF THE DEFECTS PRESENT IN InAlAs/InP ON THE SUBSTRATE TEMPERATURE
Peiro, F. ; Cornet, A. ; Herms, A. ; Morante, J. R. ; Georgakilas, A. ; Halkias, G.
Pub. info.: Advanced III-V compound semiconductor growth, processing and devices : symposium held Decmber[i.e. December] 2-5, 1991, Boston, Massachusetts, U.S.A..  pp.189-194,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 240
5.

Conference Proceedings
Conference Proceedings
5. HETEROSTRUCTURES OF GaAs AND AlAs ON SILICON: X-RAY ANALYSIS AND EXCIMER LASER ANNEALING
Georgakilas, A. ; Fatemi, M. ; Fotiadis, L. ; Christou, A.
Pub. info.: Heteroepitaxy on silicon : fundamentals, structure, and devices : symposium held April 5-8, 1988, Reno, Nevada, U.S.A..  pp.279-284,  1988.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 116
6.

Conference Proceedings
Conference Proceedings
6. Spontaneous Lateral Modulations in InAlAs Buffer Layers Grown by MBE on InP Substrates
Peiro, F. ; Cornet, A. ; Ferrer, J. C. ; Morante, J. R. ; Halkias, G. ; Georgakilas, A.
Pub. info.: Optoelectronic materials : ordering, composition modulation, and self-assembled structures : symposium held November 28-30, 1995, Boston, Massachusetts, U.S. ..  pp.265-,  1996.  Pittsburgh, Pennsylvania..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 417
7.

Conference Proceedings
Conference Proceedings
7. STRUCTURAL CHARACTERIZATION OF InAlAs/InGaAs LAYERS GROWN ON InP PATTERNED SUBSTRATES
Peiro, F. ; Cornet, A. ; Morante, J. R. ; Zekentes, K. ; Georgakilas, A.
Pub. info.: Compound semiconductor epitaxy : symposium held April 4-7, 1994, San Francisco, California, U.S.A..  pp.59-,  1994.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 340
8.

Conference Proceedings
Conference Proceedings
8. OBSERVATION OF GaAs/Si INTERFACE BY TEM: EFFECT OF ANNEALING ON THE STRUCTURE
Heral, H. ; Rocher, A. ; Charasse, M. N. ; Georgakilas, A. ; Chazelas, J. ; Hirtz, J. P. ; Blanck, H. ; Siejka, J.
Pub. info.: Epitaxy of semiconductor layered structures : symposium held November 30-December 4, 1987, Boston, Massachusetts, U.S.A..  pp.51-56,  1988.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 102
9.

Conference Proceedings
Conference Proceedings
9. Effect of High Temperature-Pressure on Strain Relaxation in Thin Layers of Semiconductors Epitaxially Grown on GaAs and Si Substrates
Bak-Misiuk, J. ; Misiuk, A. ; Adamczewska, J. ; Calamiotou, M. ; Kozanecki, A. ; Kuristyn, D. ; Reginski, K. ; Kaniewski, J. ; Georgakilas, A.
Pub. info.: Atomistic aspects of epitaxial growth.  pp.467-476,  2002.  Dordrecht.  Kluwer Academic Publishers
Title of ser.: NATO science series. Series 2, Mathematics, physics and chemistry
Ser. no.: 65
10.

Conference Proceedings
Conference Proceedings
10. Microstructure of GaN Layers Grown onto (001) and (111) GaAs Substrates by Molecular Beam Epitaxy
Toth, L. ; Pecz, B. ; Czigany, Zs. ; Amimer, K. ; Georgakilas, A.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.999-1002,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436