1.

Conference Proceedings
Conference Proceedings
1. SOI Production using Polish Stops Formed by Trench before Bond Techniques
Gay, D.L. ; Baine, P.T. ; Armstrong, B.M. ; Gamble, H.S.
Pub. info.: Proceedings of the Fourth International Symposium on Semiconductor Wafer Bonding : science, technology, and applications.  pp.536-543,  1997.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 97-36
2.

Conference Proceedings
Conference Proceedings
2. Photoluminescence Study of Interface Defects in Bonded Silicon Wafers
Nevin, W.A. ; Gay, D.L. ; Blackstone, S. ; Higgs, V.
Pub. info.: Semiconductor wafer bonding : science, technology, and applications : proceedings of the international symposia.  pp.187-194,  1999.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 99-35
3.

Conference Proceedings
Conference Proceedings
3. Polish Stop Formation for Sub-Micron SOI
Gay, D.L. ; Tweedie, M. ; Armstrong, B.M. ; Gamble, H.S.
Pub. info.: Proceedings of the Fourth International Symposium on Semiconductor Wafer Bonding : science, technology, and applications.  pp.307-312,  1997.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 97-36
4.

Conference Proceedings
Conference Proceedings
4. Besoi using a Silicon Germanium Etch Stop
Li, X. ; Gay, D.L. ; McNeill, D.W. ; Armstrong, B.M. ; Gamble, H.S.
Pub. info.: Proceedings of the Fourth International Symposium on Semiconductor Wafer Bonding : science, technology, and applications.  pp.313-320,  1997.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 97-36