1.

Conference Proceedings
Conference Proceedings
1. The Role of Vacancies and Oxygen for Setting up an Efficient Getter for Cu and Ni in Silicon Wafers
D. Kot ; G. Kissinger ; W. Haeckl ; A. Sattler ; W. Von Ammon
Pub. info.: High Purity Silicon 10.  pp.207-218,  2008.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 16(6)
2.

Conference Proceedings
Conference Proceedings
2. Analysis of the Nucleation Kinetics of Oxide Precipitates in Czochralski Silicon
G. Kissinger ; D. Kot ; J. Dabrowski ; V. Akhmetov ; A. Sattler
Pub. info.: High Purity Silicon 10.  pp.97-108,  2008.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 16(6)
3.

Conference Proceedings
Conference Proceedings
3. Verification of a Method to Detect Grown-in Oxide Precipitate Nuclei in Czochralski Silicon
G. Kissinger ; A. Sattler ; J. Dabrowski ; W. Von Ammon
Pub. info.: Analytical and diagnostic techniques for semiconductor materials, devices and processes 7.  pp.161-171,  2007.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 11(3)
4.

Conference Proceedings
Conference Proceedings
4. Impact of RTA on the Morphology of Oxygen Precipitates and on the Getter Efficiency for Cu and Ni in Si Wafers
D. Kot ; G. Kissinger ; M.A. Schubert ; T. Müller ; A. Sattler
Pub. info.: Defects-recognition, imaging and physics in semiconductors XIV : selected, peer reviewed papers from the 14th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors, September 25-29, 2011, Miyazaki, Japan.  pp.239-242,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 725
5.

Conference Proceedings
Conference Proceedings
5. Nitrogen Doped 300 mm Czochralski Silicon Wafers Optimized with Respect to Voids with Laterally Homogeneous Internal Getter Capabilities
G. Kissinger ; G. Raming ; R. Wahlich ; T. Müller
Pub. info.: Defects-recognition, imaging and physics in semiconductors XIV : selected, peer reviewed papers from the 14th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors, September 25-29, 2011, Miyazaki, Japan.  pp.221-226,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 725
6.

Conference Proceedings
Conference Proceedings
6. Oxide Precipitatation via Coherent "Seed"-Oxide Phases
G. Kissinger ; J. Dabrowski
Pub. info.: High purity silicon 9.  pp.97-112,  2006.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 3(4)
7.

Conference Proceedings
Conference Proceedings
7. Analytical Modeling of the Interaction of Vacancies and Oxygen for Oxide Precipitation in RTA Treated Wafers
G. Kissinger ; J. Dabrowski ; A. Sattler ; C. Seuring ; T. Mueller ; H. Richter ; W. Von Ammon
Pub. info.: Silicon materials science and technology X.  pp.247-260,  2006.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 2(2)