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20 results

Conference Proceedings

1. A NOVEL GROWTH METHOD FOR HIGH QUALITY GaAs/CaF2/Si(111) STRUCTURES BY USING "TYPE-A" CaF2 FILM

Mizukami, H. ; Ono, A. ; Tsutsui, K. ; Furukawa, S.

Pub. info.:	Interface dynamics and growth : symposium held December 2-6, 1991, Boston, Massachusetts, U.S.A.. pp.505-510, 1992. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	237

Conference Proceedings

2. Estimation of path length factor for measurement of haemoglobin concentration in the exposed cortical tissue [5859-27]

Sakaguchi, K. ; Tachibana, T. ; Yokoyama, K. ; Furukawa, S. ; Katsura, T. ; Maki, A. ; Kawaguchi, H. ; Okada, E.

Pub. info.:	Photon migration and diffuse-light imaging II : 12-16 June 2005, Munich, Germany. pp.58590S-, 2005. Bellingham, Wash.. SPIE - The International Society of Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	5859

Conference Proceedings

3. *LAYERED STRUCTURES COMPOSED OF Si, Ge, GaAs, AND FLUORIDES

Ishiwara, H. ; Asano, T. ; Tsutsui, K. ; Lee, H. C. ; Furukawa, S.

Pub. info.:	Silicon-on-insulator and buried metals in semiconductors : symposium held November 30-December 3, 1987, Boston, Massachusetts, U.S.A.. pp.241-252, 1988. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	107

Conference Proceedings

4. Fabrication of Compact Ion Implanter for Silicon Carbide Devices

Mitani, S. ; Yamaguchi, S. ; Furukawa, S. ; Nakata, T. ; Horino, Y. ; Ono, R. ; Hosokawa, Y. ; Miyamoto, M. ; Nishino, S.

Pub. info.:	Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy. pp.605-608, 2005. Uetikon-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	483-485

Conference Proceedings

5. *HETEROEPITAXIAL Si-, Ge-, AND GaAs-ON-INSULATOR STRUCTURES ON Si SUBSTRATES BY USE OF FLOURIDE INSULATORS

Asano, T. ; Ishiwara, H. ; Furukawa, S.

Pub. info.:	Heteroepitaxy on silicon II : symposium held April 21-23, 1987, Anaheim, California, U.S.A.. pp.337-348, 1987. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	91

Conference Proceedings

6. HETEROEPITAXY OF Si, Ge, AND GaAS FILMS ON CaF2/Si STRUCTURES

Ishiwara, H. ; Asano, T. ; Lee, H.C. ; Kuriyama, Y. ; Seki, K. ; Furukawa, S.

Pub. info.:	Heteroepitaxy on silicon : symposium held April 16-18, 1986, Palo Alto, California, U.S.A.. pp.105-114, 1986. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	67

Conference Proceedings

7. CONTROL OF THE INITIAL STAGE OF Ge OVERGROTH ON CaF2/Si STRUCTURE BY ELECTRON BEAM EXPOSURE

Kanemaru, S. ; Ishiwara, H. ; Furukawa, S.

Pub. info.:	Initial stages of epitaxial growth : symposium held April 22-24, 1987, Anaheim, California, U.S.A.. pp.71-76, 1987. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	94

Conference Proceedings

8. EXPITAXIAL RELATIONS IN FLUORIDE FILMS GROWN ON GaAs (111) AND Ge (111) SUBSTRATES

Tsutsui, K. ; Ishiwara, H. ; Asano, T. ; Furukawa, S.

Pub. info.:	Thin films : the relationship of structure to properties : symposium held April 15-17, 1985, San Francisco, California, U.S.A.. pp.93-98, 1985. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	47

Conference Proceedings

9. DEFECT DEPTH PROFILE IN Si(IOO) P/P- EPITAXIAL WAFERS

Schmolke, R. ; Feijo, D. ; Ostermeir, R. ; Schauer, R. ; Furukawa, S. ; Graef, D.

Pub. info.:	Silicon materials science and technology : proceedings of the Eighth International Symposium on Silicon Materials Science and Technology. pp.855-868, 1998. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	98-1(1)

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Conference Proceedings

10. *FORMATION OF GaAs OHMIC CONTACTS BY USING ION BEAM MIXING

Furukawa, S. ; Asano, T. ; Fukada, T. ; Ishiwara, H. ; Tsutsui, K.

Pub. info.:	Thin films : interfaces and phenomena : symposium held December 2-6, 1985, Boston, Massachusetts, USA. pp.207-214, 1985. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	54

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