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18 results

Conference Proceedings

1. Almost Ideal Thermionic-Emission Properties of Ti-Based 4H-SiC Schottky Barrier Diodes

Stephani, D. ; Schoerner, R. ; Peters, D. ; Friedrichs, P.

Pub. info.:	Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005. pp.1147-1150, 2006. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	527-529

Conference Proceedings

2. Annealing of Aluminum Implanted 4H-SiC: Comparison of Furnace and Lamp Annealing

Rambach, M. ; Bauer, A. J. ; Frey, L. ; Friedrichs, P. ; Ryssel, H.

Pub. info.:	Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy. pp.621-624, 2005. Uetikon-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	483-485

Conference Proceedings

3. Challenges in Large-Area Multi-Wafer SiC Epitaxy for Production Needs

Thomas, B. ; Hecht, C. ; Stein, R. ; Friedrichs, P.

Pub. info.:	Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005. pp.135-140, 2006. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	527-529

Conference Proceedings

4. Large Area, Avalanche-Stable 4H-SiC PiN Diodes with VBR > 4.5 kV

Peters, D. ; Elpelt, R. ; Schorner, R. ; Dohnke, K. O. ; Friedrichs, P. ; Stephani, D.

Pub. info.:	Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy. pp.977-980, 2005. Uetikon-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	483-485

Conference Proceedings

5. SiC Power MOSFETs - Status, Trends and Challenges

Peters, D. ; Schoerner, R. ; Friedrichs, P. ; Stephani, D.

Pub. info.:	Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005. pp.1255-1260, 2006. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	527-529

Conference Proceedings

6. Comparison of 4H-SiC pn, Pinch and Schottky Diodes for the 3 kV Range

Peters, D. ; Friedrichs, P. ; Schorner, R. ; Stephani, D.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.1125-1128, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

Conference Proceedings

7. Influence of the Buried p-Layer on the Blocking behavior of Vertical JFETs in 4H-SiC

Friedrichs, P. ; Mitlehner, H. ; Schoerner, R. ; Kaltschmidt, R. ; Dohnke, K.O. ; Stephani, D.

Pub. info.:	Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000. pp.695-698, 2001. Uetikon-Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	353-356

Conference Proceedings

8. Rugged Power MOSFETs in 6H-SiC with Blocking Capability up to 1800V

Schorner, R. ; Friedrichs, P. ; Peters, D. ; Mitlehner, H. ; Weis, B. ; Stephani, D.

Pub. info.:	Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999. pp.1295-1298, 2000. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	338-342(2)

Conference Proceedings

9. Application-Oriented Unipolar Switching SiC Devices

Friedrichs, P. ; Mitlehner, H. ; Schorner, R. ; Dohnke, K.-O. ; Elpelt, R. ; Stephani, D.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.1185-1190, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

10.

Conference Proceedings

10. Reliability and Degradation of Metal-Oxide-Semiconductor Capacitors on 4H- and 6H-Silicon Carbide

Treu, M. ; Schorner, R. ; Friedrichs, P. ; Rupp, R. ; Wiedenhofer, A. ; Stephani, D. ; Ryssel, H.

Pub. info.:	Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999. pp.1089-1092, 2000. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	338-342(2)

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