1.

Conference Proceedings
Conference Proceedings
1. Extracting Activation and Compensation Ratio from Aluminum Implanted 4H-SiC by Modelling of Resistivity Measurements
Rambach, M. ; Frey, L. ; Bauer, A.J. ; Ryssel, H.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.827-830,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
2.

Conference Proceedings
Conference Proceedings
2. TRACE ANALYSIS OF SILICON SURFACES USING ANGLE- DEPENDENT TOTAL-REFLECTION X-RAY FLUORESCENCE
Streckfuss, N. ; Frey, L. ; Pichler, P. ; Kuegel, M. ; Zielonka, G. ; Ryssel, H.
Pub. info.: Proceedings of the Satellite Symposium to ESSDERC 93 Grenoble/France : crystalline defects and contamination: their impact and control in device manufacturing.  pp.222-231,  1993.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 1993-15
3.

Conference Proceedings
Conference Proceedings
3. Annealing of Aluminum Implanted 4H-SiC: Comparison of Furnace and Lamp Annealing
Rambach, M. ; Bauer, A. J. ; Frey, L. ; Friedrichs, P. ; Ryssel, H.
Pub. info.: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.621-624,  2005.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 483-485
4.

Conference Proceedings
Conference Proceedings
4. 15 Thin HfxTiySizO Films with Varying Hf to Ti Contents as Candidates for High-k Dielectrics
Bauer, A. G. ; Paskaleva, A. ; Lemberger, M. ; Frey, L. ; Ryssel, H.
Pub. info.: Advanced gate stack, source/drain and channel engineering for Si-based CMOS, new materials, processes, and equipment : proceedings of the international symposium.  pp.125-132,  2005.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2005-05
5.

Conference Proceedings
Conference Proceedings
5. Wafer scale characterization of interface state densities without test structures by photocurrent analysis
Rommel, M. ; Graft, M. ; Frey, L. ; Bauer, A. J. ; Ryssel, H.
Pub. info.: Crystalline defects and contamination: their impact and control in device manufacturing IV : DECON 2005 : proceedings of the Satellite Symposium to ESSDERC 2005, Grenoble, France.  pp.113-122,  2005.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2005-10
6.

Conference Proceedings
Conference Proceedings
6. High-k hafnium silicate films on silicon and germanium wafers by MOCVD using single-source precursor
Lemberger, M. ; Schon, F. ; Dirnecker, T. ; Jank, M. P. M. ; Pakaleva, A. ; Bauer, A. J. ; Frey, L. ; Ryssel, H.
Pub. info.: EUROCVD-15, fifteenth European Conference on Chemical Vapor Deposition : proceedings of the international symposium.  pp.873-880,  2005.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2005-09
7.

Conference Proceedings
Conference Proceedings
7. Experimental and Numerical Study of the CVD of TiO2 using New Titanium Precursors
Leistner, T ; Frey, L. ; Bauer, A. ; Schmidt, C. ; Lehmbacher, K. ; Haerler, P. ; Herrmann, W. ; Mesic, E. ; Kaufmann, P. ; Kudinski, L. ; Durst, F.
Pub. info.: Fundamental gas-phase and surface chemistry of vapor-phase deposition II and process control, diagnostics, and modeling in semiconductor manufacturing IV : proceedings of the international symposium.  pp.160-167,  2001.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2001-13
8.

Conference Proceedings
Conference Proceedings
8. Modeling of the Influence of Schottky Barrier Inhomogeneities on SiC Diode Characteristics
Weiss, R. ; Frey, L. ; Ryssel, H.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.973-976,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
9.

Conference Proceedings
Conference Proceedings
9. Investigation of Rapid Thermal Annealed pn-Junctions in SiC
Rambach, M. ; Weiss, R. ; Frey, L. ; Bauer, A.J. ; Ryssel, H.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.1073-1076,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
10.

Conference Proceedings
Conference Proceedings
10. Surface Properties and Electrical Characteristics of Rapid Thermal Annealed 4H-SiC
Bauer, A.J. ; Rambach, M. ; Frey, L. ; Weiss, R. ; Rupp, R. ; Friedrichs, P. ; Schorner, R. ; Peters, D.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.609-612,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436