Cubic AlGaN/GaN Hetero-Field Effect Transistors with Normally On and Normally Off Operation

Cubic AlGaN/GaN Hetero-Field Effect Transistors with Normally On and Normally Off Operation

Author(s):

Donat J. As

Elena Tschumak

Florentina Niebelschüetz

Publication title:

III-nitride materials for sensing, energy conversion and controlled light-matter interactions : symposium held November 29-December 3, 2009, Boston, Massachusetts, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

1202

Pub. Year:

2010

Page(from):

107

Page(to):

112

Pages:

6

Pub. info.:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781605111759 [1605111759]

Language:

English

Call no.:

M23500/1202

Type:

Conference Proceedings

Details

TDL ID:	ZA00050320
Series ID:	PA00000011
Conf. info. (Name):	MRS Fall Meeting
Conf. info. (Number):	2009
Conf. info. (Venue):	Boston, Massachusetts, USA
Conf. info. (Date):	2009.11.29-2009.12.03

Similar Items:

1 Conference Proceedings Schottky and Ohmic Contacts on Non-Polar Cubic GaN Epilayers Donat J. As, Elena Tschumak, Irina Laubenstein, Ricarda M. Kemper, Klaus Lischka Materials Research Society	7 Conference Proceedings Mechanism of Current Leakage in Ni Schottky Diodes on Cubic GaN and AlxGa1-xN Epilayers As, Donat J., Potthast, Stefan, Fernandez, Jara, Lischka, Klaus, Nagasawa, Hiroyuki, Abe, Masayuki Materials Research Society
2 Conference Proceedings AlGaN/GaN Based HEMTs on SiC/Si-Substrates: Influences on High Frequency Performance W. Jatal, K. Tonisch, U. Baumann, F. Schwierz, J. Pezoldt Trans Tech Publications	8 Conference Proceedings Normally Off-Mode AlGaN/GaN Heterostructure Field Effect Transistor Using p-Type Gate Contact Tsuyukuchi, Norio, Nagamatsu, Kentaro, Hirose, Yoshikazu, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, … Materials Research Society
3 Conference Proceedings Tri-Gate Al_0.2Ga_0.8N/AlN/GaN HEMTs on SiC/Si-Substrates W. Jatal, U. Baumann, H.O. Jacobs, F. Schwierz, J. Pezoldt Trans Tech Publications	9 Conference Proceedings A High-Power AlGaN/GaN Hetero Field-Effect Transistor Yoshida, Seikoh, Ishii, Hirotatsu Materials Research Society
4 Conference Proceedings AlGaN/GaN Hetero Field-Effect Transistor for a Large Current Operation Yoshida, S., Ishii, H., Li, J. Trans Tech Publications	10 Conference Proceedings Double-Channel AlGaN/GaN Heterostructure Field-Effect Transistor Gaska, R., Shur, M. S., Yang, J. W., Fjeldly, T. A. MRS - Materials Research Society
5 Conference Proceedings AlGaN/GaN Hetero Field-Effect Transistor for a Large Current Operation Yoshida, S., Ishii, H., Li, J. Trans Tech Publications	11 Conference Proceedings Reliability modeling of high voltage AlGaN/GaN and GaAs field-effect transistors R. J. Trew, Y. Liu, W. Kuang, G. L. Bilbro Society of Photo-optical Instrumentation Engineers
6 Conference Proceedings 2H-AlGaN/GaN HEMTs on 3C-SiC(111)/Si(111) Substrates K. Tonisch, W. Jatal, R. Granzner, M. Kittler, U. Baumann Trans Tech Publications	12 Conference Proceedings High Temperature Operation of a New Normally-Off AlGaN/GaN HFET on Si Substrate Yoshida, Seikoh, Li, Jiang, Wada, Takahiro, Takehara, Hironari Materials Research Society

1

2

3

4

5

6

7

8

9

10

11

12