1.

Conference Proceedings
Conference Proceedings
1. MOVPE Growth of High Electron Mobility AlGaN/GaN Heterostructures
Redwing, J. M. ; Flynn, J. S. ; Tischler, M. A. ; Mitchel, W. ; Saxler, A.
Pub. info.: Gallium nitride and related materials : the First International Symposium on Gallium Nitride and Related Materials held November 27-December 1, 1995, Boston, Massachusetts, U.S.A..  pp.201-,  1996.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 395
2.

Conference Proceedings
Conference Proceedings
2. MOVPE GaN Gas-Phase Chemistry for Reactor Design and Optimization
Safvi, S. A. ; Redwing, J. M. ; Thon, A. ; Flynn, J. S. ; Tischler, M. A. ; Kuech, T. F.
Pub. info.: III-V nitrides : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A..  pp.101-,  1997.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 449
3.

Conference Proceedings
Conference Proceedings
3. Fabrication and Optical Pumping of Laser Cavities Made by Cleaving and Wet Chemical Etching
Stocker, D. ; Schubert, E. F. ; Grieshaber, W. ; Redwing, J. M. ; Boutros, K. S. ; Flynn, J. S. ; Vaudo, R. P.
Pub. info.: Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A..  pp.1009-,  1998.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 482
4.

Conference Proceedings
Conference Proceedings
4. InGaN Double Heterostructures and DH-LEDs on HVPE GaN-on-Sapphire Substrates
Boutros, K. S. ; Flynn, J. S. ; Phanse, V. ; Vaudo, R. P. ; Smith, G. M. ; Redwing, J. M. ; Tolliver, T. R. ; Anderson, N. G.
Pub. info.: Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A..  pp.1047-,  1998.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 482
5.

Conference Proceedings
Conference Proceedings
5. Stimulated Emission from Single- and Multiple-Quantum-Well GaN-AlGaN Separate-Confinement Heterostructures
Loeber, D. A. S. ; Anderson, N. G. ; Redwing, J. M. ; Flynn, J. S. ; Smith, G. M. ; Tischler, M. A.
Pub. info.: III-V nitrides : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A..  pp.1203-,  1997.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 449
6.

Conference Proceedings
Conference Proceedings
6. GaN PIN Photodiodes Grown on Sapphire and SiC Substrates
Smith, G. M. ; Chriss, M. F. ; Tamweber, F. D. ; Boutros, K. S. ; Flynn, J. S. ; Keogh, D. M.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.1627-1630,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(2)
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Conference Proceedings
Conference Proceedings
7. AlGaN/GaN high electron mobility transistor structure design and effects on electrical properties
Piner, E. L. ; Keogh, D. M. ; Flynn, J. S. ; Redwing, J. M.
Pub. info.: GaN and related alloys - 1999 : symposium held November 28-December 3, 1999, Boston, Massachusetts, U.S.A..  pp.W4.4.1-,  2000.  Warrendale, Pa..  MRS-Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 595