1.

Conference Proceedings
Conference Proceedings
1. Effect of supplemental dose in SIMOX on very high ionizing dose response
Flament, O. ; Paillet, P. ; Leray, J.L. ; Aspar, B. ; Giffard, B. ; Auberton-Herve, A.J.
Pub. info.: Proceedings of the Sixth International Symposium on Silicon-on-Insulator Technology and Devices.  pp.381-389,  1994.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 1994-11
2.

Conference Proceedings
Conference Proceedings
2. Post-irradiation evolution of SOI-SIMOX MOS transistors parameters
Berland, V. ; Touboul, A. ; Flament, O.
Pub. info.: Proceedings of the Sixth International Symposium on Silicon-on-Insulator Technology and Devices.  pp.390-396,  1994.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 1994-11
3.

Conference Proceedings
Conference Proceedings
3. Behaviour of buried oxides in SOl-SIMOX transistors under ionizing radiation
Berland, V. ; Touboul, A. ; Flament, O.
Pub. info.: Proceedings of the Sixth International Symposium on Silicon-on-Insulator Technology and Devices.  pp.367-374,  1994.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 1994-11
4.

Conference Proceedings
Conference Proceedings
4. DC and Pulse Characterizations of (600V) 6H-SiC Schottky Diode Breakdown
Torres, A. ; Flament, O. ; Musseau, O. ; Billon, T.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.1215-1218,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(2)