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23 results

Conference Proceedings

1. Spectroscopic Properties of Cubic SiC on Si

Feng, Z.C. ; Talwar, D.N. ; Ferguson, I.

Pub. info.:	Silicon carbide 2002 -- materials, processing and devices : symposium held December 2-4, 2002, Boston, Massachusetts, U.S.A.. pp.121-126, 2003. Warrendale, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	742

Conference Proceedings

2. Characterization of Bulk Crystals of Transition Metal Doped ZnO for Spintronic Applications

Kane, M.H. ; Varatharajan, R. ; Feng, Z.C. ; Kandoor, S. ; Nause, J. ; Summers, C. ; Ferguson, I.T.

Pub. info.:	Progress in compound semiconductor materials -- electronic and optoelectronic applications. pp.243-248, 2004. Warrendale, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	799

Conference Proceedings

3. Optical Properties of Bulk and Epitaxial ZnO for Waveguide Applications

Ganesan, S. ; Feng, Z.C. ; Mehta, D. ; Kandoor, S. ; Wornyo, E.J. ; Nause, J. ; Ferguson, I.

Pub. info.:	Progress in compound semiconductor materials -- electronic and optoelectronic applications. pp.249-254, 2004. Warrendale, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	799

Conference Proceedings

4. Reduction of Threading Dislocation Density In AlGaN by Indium Incorporation

Kang, H. ; Feng, Z.C. ; Ferguson, I. ; Guo, S.F. ; Pophristic, M.

Pub. info.:	GaN and related alloys - 2003 : symposium held December 1-5, 2003, Boston, Massachusetts, U.S.A.. pp.335-340, 2004. Warrendale, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	798

Conference Proceedings

5. Luminescent Characteristics of InGaAsP/InP Multiple Quantum Well Structures by Impurity-Free Vacancy Disordering

Zhao, J. ; Zhang, X.D. ; Feng, Z.C. ; Deng, J.C. ; Jin, P. ; Wang, Y.C. ; Xu, G.

Pub. info.:	Progress in semiconductor materials for optoelectronic applications : symposium held November 26-29, 2001, Boston, Massachusetts, U.S.A. pp.3-8, 2002. Warrendale, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	692

Conference Proceedings

6. X-ray Diffraction Analysis of GaN and AlGaN

Kang, H. ; Spencer, N. ; Nicol, D. ; Feng, Z.C. ; Ferguson, I. ; Guo, S.P. ; Pophristic, M. ; Peres, B.

Pub. info.:	GaN and related alloys - 2002 : symposium held December 2-6, Boston, Massachusetts, U.S.A.. pp.405-410, 2002. Warrendale, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	743

Conference Proceedings

7. Optical Characterization of Ion-Implanted 4H-SiC

Feng, Z.C. ; Yan, F. ; Chang, W.Y. ; Zhao, J.H. ; Lin, J.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.647-650, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

Conference Proceedings

8. Raman Scattering Study for Self-Organized Ge Quantum Dots Formed on Si Substrate

Yang, T.R. ; Dvoynenko, M.M. ; Feng, Z.C. ; Ferguson, I. ; Cheng, H.H.

Pub. info.:	Progress in semiconductors II : electronic and optoelectronic applications : symposium held December 2-5, 2002, Boston, Massachusetts, U.S.A.. pp.67-74, 2003. Warrendale, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	744

Conference Proceedings

9. Spatial Characterization of Doped SiC Wafers by Raman Spectroscopy

Burton, J.C. ; Sun, L. ; Pophristic, M. ; Lukacs, S. ; Cohen, S. ; Long, F.H. ; Liang, S. ; Lu, Y. ; Feng, Z.C. ; Li, Y. ; Tran, C.

Pub. info.:	Proceedings of the Second Symposium on III-V Nitride Materials and Processes. pp.220-227, 1997. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	97-34

10.

Conference Proceedings

10. Luminescent Characteristics of InGaAsP/InP Multiple Quantum Well Structures by Impurity-Free Vacancy Disordering

Zhao, J. ; Zhang, X.D. ; Feng, Z.C. ; Deng, J.C. ; Jin, P. ; Wang, Y.C. ; Xu, G.

Pub. info.:	GaN and related alloys - 2001 : symposium held November 26-30, 2001, Boston, Massachusetts, U.S.A.. pp.371-376, 2002. Warrendale, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	693

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Author: Feng, Z.C.