Search records | 東京工業大学附属図書館文献データベース

You can search for articles included in proceedings of international conferences and technical papers which Tokyo Tech Library holds.
Tokyo Tech members can obtain tables of contents of 17,000 foreign journals by SwetScan. Tokyo Tech Library does not cover all of them.
List of Searchable Databases

Clear Form

Search for other sites by same keyword(s).

CiNii Books

NDL Search

WebcatPlus

amazon

カーリル

WorldCat

Filter

Title:

Author:

ISBN / ISSN / Paper No:

Source Title:

Publisher:

Publication Year:

～

Clear Form

Type:

Conference Proceedings

Technical Paper

Academic Journal

Select: Check all | Remove all

Sort order

10 | 50 | 100 / Per Page

28 results

Conference Proceedings

1. Ohmic Contacts to P-Type Epitexial and Imlanted 4H-SiC

Crofton, J. ; Williams, J.R. ; Adedeji, A.V. ; Scofield, J.D. ; Dhar, S. ; Feldman, L.C. ; Bozack, M.J.

Pub. info.:	Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005. pp.895-898, 2006. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	527-529

Conference Proceedings

2. Nitrogen and Hydrogen Induced Trap Passivation at the SiO2/4H-SiC Interface

Dhar, S. ; Wang, S.R. ; Ahyi, A.C. ; Isaacs-Smith, T. ; Pantelides, S.T. ; Williams, J.R. ; Feldman, L.C.

Pub. info.:	Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005. pp.949-954, 2006. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	527-529

Conference Proceedings

3. Si/SiO2 and SiC/SiO2 Interfaces for MOSFETs - Challenges and Advances

Pantelides, S.T. ; Wang, S. ; Franceschetti, A. ; Buczko, R. ; Di Ventra, M. ; Rashkeev, S.N. ; Tsetseris, L. ; Evans, M.H. ; Batyrev, I.G. ; Feldman, L.C. ; Dhar, S. ; McDonald, K. ; Weller, R.A. ; Schrimpf, R.D. ; Fleetwood, D.M.

Pub. info.:	Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005. pp.935-948, 2006. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	527-529

Conference Proceedings

4. MOLECULAR BEAM EPITAXIAL GROWTH OF VERY HIGH MOLECULAR BEAN EPITAXIAL GROWTH OF VERY HIGH Si/GeSi HETEROSTRUCTURES

Xie, Y.H. ; Fitzgerald, E.A. ; Mii, Y,J, ; Monroe, D. ; Thiel, F.A. ; Weir, B.E. ; Feldman, L.C.

Pub. info.:	Silicon molecular beam epitaxy : symposium held April 29-May 3, 1991, Anaheim, California, U.S.A.. pp.413-420, 1991. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	220

Conference Proceedings

5. Passivation of Oxide Layers on 4H-SiC Using Sequential Anneals in Nitric Oxide and Hydrogen

Williams, J. R. ; Isaacs-Smith, T. ; Wang, S. ; Ahyi, C. ; Lawless, R. M. ; Tin, C. C. ; Dhar, S. ; Franceschetti, A. ; Pantelides, S. T. ; Feldman, L.C. ; Chung, G. ; Chisholm, M.

Pub. info.:	Fundamentals of novel oxide/semiconductor interfaces : symposium held December 1-4, 2003, Boston, Massachusetts, U.S.A.. pp.371-378, 2004. Warrendale, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	786

Conference Proceedings

6. Compositional and Electrical Differences of SiO2/SiC and SiO2/Si Structures Upon Thermal Annealing in N2O and NO

Stedile, F.C. ; Radtke, C. ; Baumvol, I.J.R. ; Boudinov, H. ; McDonald, K. ; Huang, M.B. ; Weller, R.A. ; Feldman, L.C. ; Williams, J.R.

Pub. info.:	The physics and chemistry of SiO2 and the Si-SiO2 interface-4, 2000 : proceedings of the fourth International Symposium on the Physics and Chemistry of SiO2 and the Si-SiO2 Interface, Tronto, Canada, May 15-18, 2000. pp.169-180, 2000. Pennington, N.J.. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2000-2

Conference Proceedings

7. Nitrogen Content and Interface Trap Reduction in SiO2/4H-SiC

McDonald, K. ; Weller, R.A. ; Pantelides, S.T. ; Feldman, L.C. ; Chung, G.Y ; Tin, C.C. ; Williams, J.R.

Pub. info.:	Silicon nitride and silicon dioxide thin insulating films VII : proceedings of the international symposium. pp.341-347, 2003. Pennington, N.J.. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2003-2

Conference Proceedings

8. Electroless copper deposition on tungsten for silicon integrated circuits

Mak, C.Y. ; Feldman, L.C. ; Wong, Y-H. ; Weir, B.E. ; Blanco, J. ; Angyal, M. ; Scacham-Diamond, Y.

Pub. info.:	Proceedings of the Second International Symposium on Electrochemical Technology Applications in Electronics. pp.233-256, 1993. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	1993-20

Conference Proceedings

9. THE INFLUENCE OF RECONSTRUCTION ON THE INITIAL STAGES OF SILICON MOLECULAR BEAM EPITAXY

Gossrnann, H.-J. ; Feldman, L.C.

Pub. info.:	Layered structures and epitaxy : symposium held December 2-4, 1985, Boston, Massachusetts, U.S.A.. pp.33-38, 1985. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	56

10.

Conference Proceedings

10. INITIAL STAGES OF INTERFACE FORMATION IN THE Si/Sn SYSTEM

Zinke-Allmang, M. ; Gossman, H.-J. ; Feldman, L.C. ; Fisanick, G.J.

Pub. info.:	Interfaces, superlattices, and thin films : symposium held December 1-6, 1986, Boston, Massachusetts, U.S.A.. pp.703-708, 1987. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	77

28 results

Select: Check all | Remove all

Sort order

10 | 50 | 100 / Per Page

Filtering by:

Author: Feldman, L.C.