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26 results

Conference Proceedings

1. GETTERING OF TRANSITION METALS AT OXIDE PRECIPITATES IN SILICON

Falster, R.

Pub. info.:	Proceedings of the Satellite Symposium to ESSDERC 93 Grenoble/France : crystalline defects and contamination: their impact and control in device manufacturing. pp.149-169, 1993. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	1993-15

Conference Proceedings

2. A MODEL FOR ROOM-TEMPERATURE WET OXIDATION OF SILICON

Cerofolini, G.F. ; Meda, L. ; Falster, R.

Pub. info.:	Proceedings of the Seventh International Symposium on Silicon Materials Science and Technology. pp.379-390, 1994. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	1994-10

Conference Proceedings

3. INVITED: INTRINSIC POINT DEFECTS AND REACTIONS IN THE GROWTH OF LARGE SILICON CRYSTALS

Falster, R. ; Voronkov, V.V. ; Holzer, J.C. ; Markgrafh, S. ; McQuaid, S.A. ; Mule'Stagno, L.

Pub. info.:	Silicon materials science and technology : proceedings of the Eighth International Symposium on Silicon Materials Science and Technology. pp.468-489, 1998. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	98-1(1)

Conference Proceedings

4. INFLUENCE OF POLYSILICON AND CRUCIBLE PURITY ON THE MINORITY CARRIER RECOMBINATION LIFETIME OF CZOCHRALSKI SILICON CRYSTALS

Borionetti, G. ; Porrini, M. ; Geranzani, P. ; Orizio, R. ; Falster, R.

Pub. info.:	Proceedings of the Seventh International Symposium on Silicon Materials Science and Technology. pp.104-110, 1994. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	1994-10

Conference Proceedings

5. Gate oxide Integrity Response as a Function of Near the Surface Crystal Defects Morphology

Borionetti, G. ; Godio, P. ; Bonoli, F. ; Comara, M. ; Orizio, R. ; Falster, R.

Pub. info.:	High Purity Silicon VI : proceedings of the sixth International Symposium. pp.456-466, 2000. Bellingham, Wash.. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2000-17

Conference Proceedings

6. Behaviour and effects of intrinsic point defects in the growth of large silicon crystals

Voronkov, V.V. ; Falster, R. ; Holzer, J.C.

Pub. info.:	Proceedings of the Symposium on Crystalline Defects and Contamination, their Impact and Control in Device Manufacturing II. pp.3-17, 1997. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	97-22

Conference Proceedings

7. The Engineering of Silicon Wafer Material Properties Through Vacancy Concentration Profile Control and the Achievement of Ideal Oxygen Precipitation Behaviour

Falster, R. ; Gambaro, D. ; Olmo, M. ; Cornara, M. ; Korb, H.

Pub. info.:	Proceedings of the Fifth International Symposium on High Purity Silicon V. pp.135-146, 1998. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	98-13

Conference Proceedings

8. CHARACTERIZATION OF METALLIC IMPURITIES IN LARGE DIAMETER CZ Si WAFERS IN HIGH VOLUME PRODUCTION ENVIRONMENT

Eichinger, P. ; Hage, J. ; Huber, D. ; Falster, R.

Pub. info.:	Proceedings of the Satellite Symposium to ESSDERC 93 Grenoble/France : crystalline defects and contamination: their impact and control in device manufacturing. pp.240-251, 1993. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	1993-15

Conference Proceedings

9. Vacancy-Nitrogen Complexes in Float-Zone Silicon

Quast, F. ; Pichler, P. ; Ryssel, H. ; Falster, R.

Pub. info.:	High Purity Silicon VI : proceedings of the sixth International Symposium. pp.156-163, 2000. Bellingham, Wash.. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2000-17

10.

Conference Proceedings

10. *GETTERING AND GETTERING STABILITY OF METALS AT OXIDE PARTICLES IN SILICON

Falster, R. ; Laczik, Z. ; Booker, G. R ; Bhatti, A. R. ; Tork, P.

Pub. info.:	Defect engineering in semiconductor growth, processing and device technology : symposium held April 26-May 1, 1992, San Francisco, California, U.S.A.. pp.945-956, 1992. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	262

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