1.

Conference Proceedings
Conference Proceedings
1. Initial Stages of the Graphite-SiC(0001) Interface Formation Studied by Photoelectron Spectroscopy
K.V. Emtsev ; T. Seyller ; F. Speck ; L. Ley ; P. Stojanov ; J.D. Riley ; R.C.G. Leckey
Pub. info.: Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006.  pp.525-528,  2007.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 556-557
2.

Conference Proceedings
Conference Proceedings
2. Electronic Structure of Graphite/6H-SiC Interfaces
T. Seyller ; K.V. Emtsev ; F. Speck ; K.Y. Gao ; L. Ley
Pub. info.: Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006.  pp.701-704,  2007.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 556-557
3.

Conference Proceedings
Conference Proceedings
3. 4H-SiC Metal-Oxide-Semiconductor (MOS) Capacitors Fabricated by Oxidation in a Tungsten Lamp Furnace in Combination with a Microwave Plasma and Subsequent Deposition of Al2O3
S. Beljakowa ; T. Frank ; G. Pensl ; K.Y. Gao ; F. Speck ; T. Seyller
Pub. info.: Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006.  pp.627-630,  2007.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 556-557
4.

Conference Proceedings
Conference Proceedings
4. Gated Epitaxial Graphene Devices
D. Waldmann ; J. Jobst ; F. Speck ; T. Seyller ; M. Krieger
Pub. info.: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.675-678,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 717-720
5.

Conference Proceedings
Conference Proceedings
5. Decoupling the Graphene Buffer Layer from SiC(0001) via Interface Oxidation
M. Ostler ; R.J. Koch ; F. Speck ; F. Fromm ; H. Vita
Pub. info.: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.649-652,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 717-720
6.

Conference Proceedings
Conference Proceedings
6. Strain and Charge in Epitaxial Graphene on Silicon Carbide Studied by Raman Spectroscopy
J. Röhrl ; M. Hundhausen ; F. Speck ; T. Seyller
Pub. info.: Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009.  pp.603-606,  2010.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 645-648
7.

Conference Proceedings
Conference Proceedings
7. Quasi-Freestanding Graphene on SiC(0001)
F. Speck ; M. Ostler ; J. Röhrl ; J. Jobst ; D. Waldmann
Pub. info.: Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009.  pp.629-632,  2010.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 645-648