The Effect of Interfacial Charge on the Development of Wafer Bonded Silicon-on-Silicon-Carbide Power Devices
- Author(s):
P.M. Gammon F. Li C.W. Chan A.M. Sanchez S.A. Hindmarsh F. Gity T. Trajkovic V. Kilchytska V. Pathirana G. Camuso K. Ben Ali D. Flandre P.A. Mawby J.W. Gardner - Publication title:
- Silicon Carbide and Related Materials 2016
- Title of ser.:
- Materials science forum
- Ser. no.:
- 897
- Pub. Year:
- 2017
- Page(from):
- 747
- Page(to):
- 750
- Pages:
- 4
- Pub. info.:
- Aedermannsdorf, Switzerland: Trans Tech Publications
- ISSN:
- 02555476
- ISBN:
- 9783035710434 [3035710430]
- Language:
- English
- Call no.:
- M23650
- Type:
- Conference Proceedings
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