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11 results

Conference Proceedings

1. Optical Centers Related to Laser-Doped Erbium in Silicon

Nakashima, K. ; Eryu, O. ; Iioka, O. ; Minami, H. ; Watanabe, M.

Pub. info.:	Rare earth doped semiconductors II : symposium held April 8-10, 1996, San Francisco, California, U.S.A.. pp.75-, 1996. Pittsburgh. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	422

Conference Proceedings

2. Direct Observation of the Solid-Phase Recrystallization of Self-Implanted Amorphous SiC Layer on (11-20), (1-100), and (0001) Oriented 6H-SiC

Eryu, O. ; Matsuo, D. ; Abe, K. ; Nakashima, K.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.843-846, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

Conference Proceedings

3. Effects of Surface Treatments of 6H-SiC upon Metal-SiC Interfaces

Abe, K. ; Sumitomo, M. ; Sumi, T. ; Eryu, O. ; Nakashima, K.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.909-912, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

Conference Proceedings

4. Excimer Laser Annealing of Ion-Implanted 6H-Silicon Carbide

Hishida, Y. ; Watanabe, M. ; Nakashima, K. ; Eryu, O.

Pub. info.:	Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999. pp.873-876, 2000. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	338-342(2)

Conference Proceedings

5. Improved Ohmic Contacts to 6H-SiC by Pulsed Laser Processing

Nakashima, K. ; Eryu, O. ; Ukai, S. ; Yoshida, K. ; Watanabe, M.

Pub. info.:	Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999. pp.1005-1008, 2000. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	338-342(2)

Conference Proceedings

6. Impurity Activation in N+ Ion-Implanted 6H-SiC with Pulsed Laser Annealing Method

Eryu, O. ; Aoyama, K. ; Abe, K. ; Nakashima, K.

Pub. info.:	Silicon carbide--materials, processing and devices : symposium held November 27-29, 2000, Boston, Massachusetts, U.S.A.. 2001. Warrendale, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	640

Conference Proceedings

7. Effects of Surface Treatments of 6H-SiC upon Metal-SiC Interfaces

Abe, K. ; Sumitomo, M. ; Sumi, T. ; Eryu, O. ; Nakashima, K.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.909-912, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

Conference Proceedings

8. A New Type of SiC Gas Sensor with a pn-Junction Structure

Nakashima, K. ; Okuyama, Y. ; Ando, S. ; Eryu, O. ; Abe, K. ; Yokoi, H. ; Oshima, T.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.1427-1430, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

Conference Proceedings

9. A New Type of SiC Gas Sensor with a pn-Junction Structure

Nakashima, K. ; Okuyama, Y. ; Ando, S. ; Eryu, O. ; Abe, K. ; Yokoi, H. ; Oshima, T.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.1427-1430, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

10.

Conference Proceedings

10. Direct Observation of the Solid-Phase Recrystallization of Self-Implanted Amorphous SiC Layer on (11-20), (1-100), and (0001) Oriented 6H-SiC

Eryu, O. ; Matsuo, D. ; Abe, K. ; Nakashima, K.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.843-846, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

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Author: Eryu, O.