1.

Conference Proceedings
Conference Proceedings
1. ASPECTS OF “HIGH MINORITY-CARRIER LIFETIME” GaAs ON Si USING A NOVEL SiGe/Ge BUFFER
Venkatasubramanian, R. ; Posthill, J. B. ; Timmons, M. L. ; Ehsani, H. ; Ghandhi, S. K. ; Keyes, B. M. ; Ahrenkiel, R. K.
Pub. info.: Heteroepitaxy of dissimilar materials : symposium held April 29-May 2, 1991, Anaheim, California, U.S.A..  pp.385-392,  1991.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 221
2.

Conference Proceedings
Conference Proceedings
2. INFRA-RED PHOTODIODES IN Hg1-xCdxTe GROWN BY OMVPE
Parat, K.K. ; Tashar, N.R. ; Ehsani, H. ; Bhat, I.B. ; Ghandhi, S.K.
Pub. info.: Long-wavelength semiconductor devices, materials, and processes : symposium held November 26-29, 1990, Boston, Massachusetts, U.S.A..  pp.87-92,  1991.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 216
3.

Conference Proceedings
Conference Proceedings
3. CHARACTERISTICS OF SULFUR IN OMVPE GROWN INDIUM PHOSPHIDE
Tyagi, S.D. ; Ehsani, H. ; Ghandhi, S.K.
Pub. info.: Chemical perspectives of microelectronic materials II : symposium held November 26-28, 1990, Boston, Massachusetts, U.S.A..  pp.201-206,  1991.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 204
4.

Conference Proceedings
Conference Proceedings
4. CHARACTERISTIC OF ZnSe LAYERS GROWN ON Zn-STABILIZED AND Se-STABILIZED GaAs SUBSTRATES
Akram, S. ; Ehsani, H. ; Bhat, I.B. ; Ghandhi, S.K.
Pub. info.: Wide band gap semiconductors : symposium held December 2-6, 1991, Boston, Massachusetts, U.S.A..  pp.261-272,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 242