1.

Conference Proceedings
Conference Proceedings
1. Near Band-Gap Emission in V-Inrplanted and Annealed 4H-SiC
Henry,A. ; Egilsson,T. ; Ivanov,I.G. ; Harris,C.I. ; Savage,S. ; Janzen,E.
Pub. info.: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part1  pp.497-500,  1998.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 264-268
2.

Conference Proceedings
Conference Proceedings
2. Changes in the Exciton-Related Photoluminescence of 4H- and 6H-SiC Induced by Uniaxial Stress
Ivanov,I.G. ; Lindefelt,U. ; Henry,A. ; Egilsson,T. ; Kordina,O. ; Janzen,E.
Pub. info.: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part1  pp.489-492,  1998.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 264-268
3.

Conference Proceedings
Conference Proceedings
3. Characterization of Defects in Li-Diffused n-type GaAs
Yang,B.H. ; Egilsson,T. ; Kritjansson,S. ; Peiursson,J. ; Gislason,H.P.
Pub. info.: Proceedings of the 17th International Conference on Defects in Semiconductors : ICDS-17, Gmunden, Austria, July 18-23, 1993.  Pt.2  pp.839-843,  1994.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 143-147
4.

Conference Proceedings
Conference Proceedings
4. Some Aspects of the Photoluminescence and Raman Spectroscopy of(1010)-and(1120)-Oriented 4H and 6H Silicon Carbide
Ivanov,I.G. ; Henry,A. ; Hallin,C. ; Egilsson,T. ; Janzen,E.
Pub. info.: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part1  pp.469-472,  1998.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 264-268
5.

Conference Proceedings
Conference Proceedings
5. Bound Exciton Recombination in Electron Irradiated 4H-SiC
Egilsson,T. ; Henry,A. ; Ivanov,I.G. ; Lindstrom,J.L. ; Janzen,E.
Pub. info.: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part1  pp.477-480,  1998.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 264-268