1.

Conference Proceedings
Conference Proceedings
1. FERMI LEVEL EFFECTS ON DISLOCATION FORMATION IN IaAs1-xSbx GROWN BY MOCVD
Biefeld, R. M. ; Drummond, T. J.
Pub. info.: Advanced III-V compound semiconductor growth, processing and devices : symposium held Decmber[i.e. December] 2-5, 1991, Boston, Massachusetts, U.S.A..  pp.39-44,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 240
2.

Conference Proceedings
Conference Proceedings
2. ENERGY LOSS RATES FOR LIGHT HOLES IN InGaAs/GaAs STRAINED-LAYER SINGLE QUANTUM WELLS
Smith, M. C. ; Jones, E. D. ; Fritz, I. J. ; Drummond, T. J. ; Zipperian, T. E. ; Schirber, J. E.
Pub. info.: Epitaxy of semiconductor layered structures : symposium held November 30-December 4, 1987, Boston, Massachusetts, U.S.A..  pp.559-564,  1988.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 102
3.

Conference Proceedings
Conference Proceedings
3. Ultrahigh Implant Activation Efficiency in GaN Using Novel High Temperature RTP System
Cao, X. A. ; Abernathy, C. R. ; Singh, R. K. ; Pearton, S. J. ; Fu, M. ; Sarvepalli, V. ; Sekhar, J. A. ; Zolper, J. C. ; Rieger, D. J. ; Han, J. ; Drummond, T. J. ; Shul, R. J. ; Wilson, R. G.
Pub. info.: Wide-bandgap semiconductors for high power, high frequency, and high temperature : symposium held April 13-15, 1998, San Francisco, California, U.S.A..  pp.463-,  1998.  Warrendale, Penn..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 512
4.

Conference Proceedings
Conference Proceedings
4. Calculations of the Specific Resistance of Contacts to III-V Nitride Compounds
Barnes, P. A. ; Zhang, X-J ; Lovejoy, M. L. ; Drummond, T. J. ; Hjalmarson, H. P. ; Crawford, M. ; Shul, R. J. ; Zolper, J. C.
Pub. info.: Gallium nitride and related materials : the First International Symposium on Gallium Nitride and Related Materials held November 27-December 1, 1995, Boston, Massachusetts, U.S.A..  pp.849-,  1996.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 395
5.

Conference Proceedings
Conference Proceedings
5. Effect of Stoichiometry on Defect Distribution in Cubic GaN Grown on GaAs by Plasma-Assisted MBE
Ruvimov, S. ; Liliental-Weber, Z. ; Washburn, J. ; Drummond, T. J. ; Hafish, M. ; Lee, S. R.
Pub. info.: III-V nitrides : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A..  pp.251-,  1997.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 449