1.

Conference Proceedings
Conference Proceedings
1. LUMINESCENCE STUDIES OF FLAIvIE GROWN BORON DOPED DIAMOND FILMS
Doverspike, K. ; Freitas, J.A., Jr. ; Schauer, S.N. ; Khang, Y.L. ; Collins, A.T.
Pub. info.: Proceedings of the Third International Symposium on Diamond Materials.  pp.808-814,  1993.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 1993-17
2.

Conference Proceedings
Conference Proceedings
2. Hydrogen Containing Plasma Etching Influence on the Electrical Properties of n-type Gallium Nitride
Molnar, B. ; Eddy, C.R., Jr ; Doverspike, K.
Pub. info.: Proceedings of the Symposium on Wide Bandgap Semiconductors and Devices and the Twenty-Third State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXIII).  pp.236-240,  1995.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 95-21
3.

Conference Proceedings
Conference Proceedings
3. OPTICAL EVIDENCE OF REDUCTION OF RADIATIVE DEFECTS IN DIAMOND FILMS GROWN BY ACETYLENE-OXYGEN FLAMES
Freitas, Jr., J.A. ; Strom, U. ; Doverspike, K. ; Marks, C.M. ; Snail, K.A.
Pub. info.: Wide band gap semiconductors : symposium held December 2-6, 1991, Boston, Massachusetts, U.S.A..  pp.139-144,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 242
4.

Conference Proceedings
Conference Proceedings
4. Analysis of Strain in GaN on Al2O3 and 6H-SiC: Near-Bandedge Phenomena
Edwards, N. V. ; Bremser, M. D. ; Weeks, T. W., Jr. ; Kern, R. S. ; Liu, H. ; Stall, R. A. ; Wickenden, A. E. ; Doverspike, K. ; Gaskill, D. K. ; Freitas, J. A., Jr. ; Rossow, U. ; Davis, R. F. ; Aspnes, D. E.
Pub. info.: Gallium nitride and related materials : the First International Symposium on Gallium Nitride and Related Materials held November 27-December 1, 1995, Boston, Massachusetts, U.S.A..  pp.405-,  1996.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 395
5.

Conference Proceedings
Conference Proceedings
5. Status of Nitride-Based Light-Emitting and Laser Diodes on SiC
Doverspike, K. ; Bulman, G. E. ; Sheppard, S. T. ; Kong, H. S. ; Leonard, M. ; Dieringer, H. ; Weeks, T. W., Jr. ; Edmond, J. ; Brown, J. D. ; Swindle, J. T. ; Schetzina, J. F. ; Song, Y-K. ; Kuball, M. ; Nurmikko, A.
Pub. info.: Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A..  pp.1169-,  1998.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 482
6.

Conference Proceedings
Conference Proceedings
6. The First Nitride Laser Diode on Silicon Carbide
Brown, J. D. ; Swindell, J. T. ; Johnson, M. A. L. ; Yu, Zhonghai ; Schetzina, J. F. ; Bulman, G. E. ; Doverspike, K. ; Sheppard, S. T. ; Weeks, T. W. ; Leonard, M. ; Kong, H. S. ; Dieringer, H. ; Carter, C. ; Edmond, J. A.
Pub. info.: Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A..  pp.1179-,  1998.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 482
7.

Conference Proceedings
Conference Proceedings
7. On Compensation and Impurities in State-of-the-Art GaN Epilayers Grown on Sapphire
Wickenden, A. E. ; Gaskill, D. K. ; Koleske, D. D. ; Doverspike, K. ; Simons, D. S. ; Chi, P. H.
Pub. info.: Gallium nitride and related materials : the First International Symposium on Gallium Nitride and Related Materials held November 27-December 1, 1995, Boston, Massachusetts, U.S.A..  pp.679-,  1996.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 395
8.

Conference Proceedings
Conference Proceedings
8. Magneto-Optic Studies of GaN Filmas and GaN/AlGaN Heterostructures
Wang, Y. J. ; Ng, H. K. ; Kaplan, R. ; Doverspike, K. ; Gaskill, D. K. ; Ikedo, T. ; Amano, H. ; Akasaki, I.
Pub. info.: Gallium nitride and related materials : the First International Symposium on Gallium Nitride and Related Materials held November 27-December 1, 1995, Boston, Massachusetts, U.S.A..  pp.697-,  1996.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 395
9.

Conference Proceedings
Conference Proceedings
9. Improved 10-GHz Operation of GaN/AlGaN HEMTs on Silicon Carbide
Sheppard, S. T. ; Doverspike, K. ; Leonard, M. ; Pribble, W. L. ; Allen, S. T. ; Palmour, J. W.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.1643-1646,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(2)
10.

Conference Proceedings
Conference Proceedings
10. A Microscopic Evaluation of the Surface Structure of OMVPE Deposited α-GaN Epilayers
Rohrer, G. S. ; Payne, J. ; Qian, W. ; Skowronski, M. ; Doverspike, K. ; Rowland, L. B. ; Gaskill, D. K.
Pub. info.: Gallium nitride and related materials : the First International Symposium on Gallium Nitride and Related Materials held November 27-December 1, 1995, Boston, Massachusetts, U.S.A..  pp.381-,  1996.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 395