1.

Conference Proceedings
Conference Proceedings
1. Electronic nature of neutral zinc in silicon:FTIR-absorption,uniaxial stress measurements
Kaufmann,B. ; Dornen,A. ; Lang,M. ; Pensl,G. ; Grilnebaum,D. ; Stolwijk,N.
Pub. info.: Proceedings of the 16th International Conference on Defects in Semiconductors : Lehigh University, Bethlehem, Pennsylvania, 22-26 July 1991.  Pt.1  pp.197-202,  1992.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 83-87
2.

Conference Proceedings
Conference Proceedings
2. Zeeman Spectroscopy and Crystal-Field Model of Neutral Vanadium in 6H-Silicon Carbide
Kaufmann,B. ; Dornen,A. ; Ham,F.S.
Pub. info.: Proceedings of the 18th International Conference on Defects in Semiconductors : ICDS-18, Sendai, Japan, July 23-28, 1995.  pp.707-712,  1995.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 196-201
3.

Conference Proceedings
Conference Proceedings
3. Optical absorption and Zeeman study of the 6H SiC:Cr
Dornen,A. ; Kaufmann,B. ; Baur,J. ; Kunzer,M. ; Kaufmann,U. ; Baranov,P.G.
Pub. info.: Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997.  Part2  pp.697-702,  1997.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 258-263
4.

Conference Proceedings
Conference Proceedings
4. Charge-transfer at Ti ions iu ZnTe
Selber,H.R. ; Peka,P. ; Schuiz,H.J. ; Pohl,U.W. ; Kreissl,J. ; Kaufmann,B. ; Dornen,A.
Pub. info.: Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997.  Part3  pp.1401-1406,  1997.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 258-263
5.

Conference Proceedings
Conference Proceedings
5. An Optical Zeeman Study on Fe3+ in GaAs and InP
Kaufmann,B. ; Haase,D. ; Dornen,A. ; Hiller,C. ; Pressel,K.
Pub. info.: Proceedings of the 17th International Conference on Defects in Semiconductors : ICDS-17, Gmunden, Austria, July 18-23, 1993.  Pt.2  pp.797-802,  1994.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 143-147
6.

Conference Proceedings
Conference Proceedings
6. NITROGEN-CARBON INTERACTION IN OPTICAL DEFECTS IN SILICON
Dornen,A. ; Sauer, R. ; Pensl,G.
Pub. info.: Oxygen, carbon, hydrogen, and nitrogen in crystalline silicon : symposium held December 2-5, 1985, Boston, Massachusetts, U.S.A..  pp.545-552,  1986.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 59
7.

Conference Proceedings
Conference Proceedings
7. FTIR high resolution optical study of GaAs:Fe
Pressel,K. ; Ruckert,G. ; Thonke,K. ; Dornen,A.
Pub. info.: Proceedings of the 16th International Conference on Defects in Semiconductors : Lehigh University, Bethlehem, Pennsylvania, 22-26 July 1991.  Pt.2  pp.695-700,  1992.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 83-87