1.

Conference Proceedings
Conference Proceedings
1. INFRARED STUDIES OF THE DOUBLE ACCEPTOR ZINC IN SILICON
Dornen, A. ; Kienle, R. ; Thonke, K. ; Stolz, P. ; Pensl, G. ; Grunebau, D. ; Stolwijk, N.A.
Pub. info.: Impurities, defects, and diffusion in semiconductors : bulk and layered structures : symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A..  pp.21-26,  1990.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 163
2.

Conference Proceedings
Conference Proceedings
2. OPTICAL STUDY OF THE Fe3+ -RELATED EMISSION AT 0.5 eV IN InP:Fe
Pressel, Klaus ; Bohnert, G. ; Dornen, A. ; Thonke, K.
Pub. info.: Defect engineering in semiconductor growth, processing and device technology : symposium held April 26-May 1, 1992, San Francisco, California, U.S.A..  pp.301-306,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 262
3.

Conference Proceedings
Conference Proceedings
3. DEFECT REDUCTION BY THERMAL CYCLIC GROWTH IN GaAs GROWN ON Si BY MOVPE
Kurner, W. ; Dieter, R. ; Zieger, K. ; Goroncy, F. ; Dornen, A. ; Scholz, F.
Pub. info.: Physics and applications of defects in advanced semiconductors : symposium held November 29-December 1, 1993, Boston, Massachusetts, U.S.A..  pp.437-,  1994.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 325
4.

Conference Proceedings
Conference Proceedings
4. OPTICAL INVESTIGATION OF STRAINED-LAYER GaInAs/GaInAsP HETEROSTRUCTURES
Queisser, I. ; Harle, V. ; Dornen, A. ; Scholz, F.
Pub. info.: Physics and applications of defects in advanced semiconductors : symposium held November 29-December 1, 1993, Boston, Massachusetts, U.S.A..  pp.507-,  1994.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 325
5.

Conference Proceedings
Conference Proceedings
5. Metalorganic Vapor-Phase-Epitaxial Growth of GaInN/GaN Heterostructures and Quantum Wells
Scholz, F. ; Harle, V. ; Steuber, F. ; Sohmer, A. ; Bolay, H. ; Syganow, V. ; Dornen, A. ; Im, J-S. ; Hangleiter, A. ; Duboz, J-Y. ; Galtier, P. ; Rosencher, E. ; Ambacher, O. ; Brunner, D. ; Lakner, H.
Pub. info.: III-V nitrides : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A..  pp.3-,  1997.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 449
6.

Conference Proceedings
Conference Proceedings
6. DLTS and CV Analysis of Doped and N-Implanted GaN
Haase, D. ; Schmid, M. ; Dornen, A. ; Harle, V. ; Bolay, H. ; Scholz, F. ; Burkard, M. ; Schweizer, H.
Pub. info.: III-Nitride, SiC, and Diamond Materials for Electronic Devices : symposium held April, 1996, San Francisco, California, U.S.A..  pp.531-,  1996.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 423
7.

Conference Proceedings
Conference Proceedings
7. Yellow Luminescence and Associated ODMR in MOVPE GaN: A Comparison of Defect Models
Mason, P. W. ; Dornen, A. ; Harle, V. ; Scholz, F. ; Watkins, G. D.
Pub. info.: III-V nitrides : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A..  pp.793-,  1997.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 449
8.

Conference Proceedings
Conference Proceedings
8. MOVPE of rare earth doped III-V semiconductors
Scholz, F. ; Weber, J. ; Pressel, K. ; Dornen, A.
Pub. info.: Rare earth doped semiconductors : symposium held April 13-15, 1993, San Francisco, California, U.S.A..  pp.3-,  1993.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 301