1.

Conference Proceedings
Conference Proceedings
1. A Phenomenological Model for Accurate Determination of Relaxation and Ge Content in Si1-xGex Layers by Raman Line Shift and X-ray Diffractometry
Bhagavannarayana,G. ; Dietrich,B. ; Zaumseil,P. ; Dombrowski,K.F.
Pub. info.: Physics of - Semiconductor Devices -.  Part 1  pp.595-598,  1998.  New Delhi.  Narosa Publishing House
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 3316
2.

Conference Proceedings
Conference Proceedings
2. Optical investigation of Ge-rich Ge1-xSix(o｡蛉｡？.1)alloys
Franz,M. ; Pressel,K. ; Dombrowski,K.F. ; Rucker,H. ; Barz,A. ; Dold,P. ; Benz,K.W.
Pub. info.: Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997.  Part1  pp.109-114,  1997.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 258-263