1.

Conference Proceedings
Conference Proceedings
1. DEFECT MODEL AND GROWTH CHARACTERISTICS OF LOW TEMPERATURE GaAs
Fatemi, M. ; Tadayon, B. ; Dietrich, H.B. ; Tadayon, S.
Pub. info.: Low temperature (LT) GaAs and related materials : symposium held December 4-6, 1991, Boston, Massachusetts, U.S.A..  pp.137-144,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 241
2.

Conference Proceedings
Conference Proceedings
2. COMPARISON OF ISOTHERMAL ANNEAL TECHNIQUES FOR Be OR Si IMPLANTED S.I. InP
Molnar, B. ; Dietrich, H.B.
Pub. info.: Rapid thermal processing : symposium held December 2-4, 1985, Boston, Massachusetts, U.S.A..  pp.423-430,  1985.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 52
3.

Conference Proceedings
Conference Proceedings
3. HIGH DOSE IMPLANTATION OF NICKEL INTO SILICON
Campisi, G.J. ; Dietrich, H.B. ; Delfino, M. ; Sadana, D.K.
Pub. info.: Thin films : interfaces and phenomena : symposium held December 2-6, 1985, Boston, Massachusetts, USA.  pp.747-752,  1985.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 54
4.

Conference Proceedings
Conference Proceedings
4. Bonded Polycrystalline SiC Substrates for the Growth and Fabrication of GaN FETs
Hobart, K.D. ; Kub, F.J. ; Esser, R. ; Jernigan, G.G. ; Fatemi, M. ; Binari, S.C. ; Katzer, D.S. ; Dietrich, H.B. ; Kipshidze, G. ; Nikishin, S. ; Temkin, H.
Pub. info.: Semiconductor wafer bonding : science, technology, and applications : proceedings of the international symposia.  pp.92-99,  2001.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2001-27