1.

Conference Proceedings
Conference Proceedings
1. Development of 600 V/ 8 A SiC Schottky Diodes with Epitaxial Edge Termination
Templier, F. ; Ferret, P. ; Di Cioccio, L. ; Collard, E. ; Lhorte, A. ; Billon, T.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1161-1164,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
2.

Conference Proceedings
Conference Proceedings
2. Advances in SiC Materials and Technology for Schottky Diode Applications
Di Cioccio, L. ; Billon, T.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1119-1124,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
3.

Conference Proceedings
Conference Proceedings
3. New SiC on insulator wafers based on the Smart-Cut approach and their potential applications
Joly, J.P. ; Aspar, B. ; Bruel, M. ; Di Cioccio, L. ; Letertre, F. ; Hugonnard-Bruyere, E.
Pub. info.: Progress in SOI structures and devices operating at extreme conditions.  pp.31-38,  2002.  Dordrecht.  Kluwer Academic Publishers
Title of ser.: NATO science series. Series 2, Mathematics, physics and chemistry
Ser. no.: 58
4.

Conference Proceedings
Conference Proceedings
4. Transfer of Two-Inch GaN Film by the Smart CutTM Technology
Tauzin, A. ; Akatsu, T. ; Rabarot, M. ; Dechamp, J. ; Zussy, M. ; Moriceau, H. ; Michaud, J.F. ; Charvet, A.M. ; Di Cioccio, L. ; Fournel, F. ; Garrione, J. ; Letertre, F. ; Faure, B. ; Kernevez, N.
Pub. info.: Semiconductor wafer bonding : science, technology, and applications : proceedings of the international symposia.  pp.119-127,  2005.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2005-02
5.

Conference Proceedings
Conference Proceedings
5. MOLELCULAR BEAM EPITAXIAL GROWTH OF Cd1-XZnXZTe MATCHED TO HgCdTe ALLOYS
Magnea, N. ; Dal'bo, T. ; Pautrat, J. L. ; Million, A. ; Di Cioccio, L. ; Feuillet, G
Pub. info.: Materials for infrared detectors and sources : symposium held December 1-5, 1986, Boston, Massachusetts, U.S.A..  pp.455-462,  1987.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 90
6.

Conference Proceedings
Conference Proceedings
6. Nitrogen Doping of Epitaxial SiC: Experimental Evidence of the Re-Incorporation of Etched Nitrogen during Growth
Meziere, J. ; Ferret, P. ; Blanquet, E. ; Pons, M. ; Di Cioccio, L. ; Billon, T.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.731-734,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
7.

Conference Proceedings
Conference Proceedings
7. Simulation of the Large-Area Growth of Homoepitaxial 4H-SiC by Chemical Vapor Deposition
Pons, M. ; Meziere, J. ; Wang Tang Kuan, S. ; Blanquet, E. ; Ferret, P. ; Di Cioccio, L. ; Billon, T. ; Madar, R.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.223-226,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
8.

Conference Proceedings
Conference Proceedings
8. SiC Power Devices on QUASIC and SiCOI Smart-CutR Substrates: First Demonstrations
Letertre, F. ; Daval, N. ; Templier, F. ; Bano, E. ; Planson, D. ; Di Cioccio, L. ; Jalaguier, E. ; Bluet, J.M. ; Billon, T. ; Madar, R. ; Chante, J.P.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.813-818,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436
9.

Conference Proceedings
Conference Proceedings
9. 4H-SiC Material for Hall Effect and High-Temperature Sensors Working in Harsh Environments
Robert, J.-L. ; Contreras, S. ; Camassel, J. ; Pernot, J. ; Juillaguet, S. ; Di Cioccio, L. ; Billon, T.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1435-1438,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
10.

Conference Proceedings
Conference Proceedings
10. QuaSiC Smart-Cut Substrates for SiC High Power Devices
Letertre, F. ; Jalaguier, E. ; Di Cioccio, L. ; Templier, F. ; Bluet, J.M. ; Banc, C. ; Matko, I. ; Chenevier, B. ; Bano, E. ; Guillot, G. ; Billon, T. ; Aspar, B. ; Madar, R. ; Ghyselen, B.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.151-154,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393