1.

Conference Proceedings
Conference Proceedings
1. Properties of Important Deep Level T3 in Semi-Insulating Gallium Arsenide
Desnica,U.V. ; Pavlovic,M. ; Desnica,D.I. ; Santic,B. ; Smuc,T.
Pub. info.: Proceedings of the 17th International Conference on Defects in Semiconductors : ICDS-17, Gmunden, Austria, July 18-23, 1993.  Pt.1  pp.353-358,  1994.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 143-147
2.

Conference Proceedings
Conference Proceedings
2. Metastable amorphous structure in ion implanted GaAs
Desnica-Frankovic,I.D. ; Desnica,U.V. ; Ivanda,M. ; Gracin,D. ; Haynes,T.E.
Pub. info.: Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997.  Part2  pp.1057-1062,  1997.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 258-263
3.

Conference Proceedings
Conference Proceedings
3. The role of caiion vacancy in compensation of II-VI compounds by fast diffusors-example of Cu in CdS
Desnica,U.V. ; Desnica-Frankovic,I.D. ; Magerle,R. ; Burchard,A. ; Deicher,M.
Pub. info.: Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997.  Part3  pp.1347-1352,  1997.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 258-263
4.

Conference Proceedings
Conference Proceedings
4. Raman Study of "Boson Peak" in Ion-Implanted GaAs:Dependence on Ion Dose and Dose Rate
Ivanda,M. ; Desnica,U.V. ; Haynes,T.E.
Pub. info.: Proceedings of the 17th International Conference on Defects in Semiconductors : ICDS-17, Gmunden, Austria, July 18-23, 1993.  Pt.3  pp.1387-1390,  1994.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 143-147