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Conference Proceedings

1. Theory of the optical absorption and of the magnetic circular dichroism of antisite related defects in GaAs

Lannoo,M. ; Delerue,C. ; Allan,G.

Pub. info.:	Proceedings of the 16th International Conference on Defects in Semiconductors : Lehigh University, Bethlehem, Pennsylvania, 22-26 July 1991. Pt.2 pp.865-874, 1992. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	83-87

Conference Proceedings

2. Intrinsic defects in electron irradiated p-type GaAs

Jia,Y.Q. ; Bardeleben,H.J.von ; Stievenard,D. ; Delerue,C.

Pub. info.:	Proceedings of the 16th International Conference on Defects in Semiconductors : Lehigh University, Bethlehem, Pennsylvania, 22-26 July 1991. Pt.2 pp.965-970, 1992. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	83-87

Conference Proceedings

3. Energy levels associated with the metastable state of EL2

Stievenard,D. ; Delerue,C. ; Bremond,G. ; Guillot,G. ; Azoulay,R. ; Bardeleben,H.J.von ; Bourgoin,J.C. ; Portal,J.C. ; Ranz,E.

Pub. info.:	Proceedings of the 16th International Conference on Defects in Semiconductors : Lehigh University, Bethlehem, Pennsylvania, 22-26 July 1991. Pt.2 pp.911-916, 1992. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	83-87

Conference Proceedings

4. Coexistence of deep and shallow paramagnetic excited states of the DX center in GaAlAs

Bardeleben,H.J.von ; Sheinkmann,M. ; Delerue,C. ; Lannoo,M.

Pub. info.:	Proceedings of the 16th International Conference on Defects in Semiconductors : Lehigh University, Bethlehem, Pennsylvania, 22-26 July 1991. Pt.2 pp.787-792, 1992. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	83-87

Conference Proceedings

5. The Electron Irradiation Induced Defect E1,E2 in GaAs:Arsenic Frenkel Pair Versus Displaced Arsenic Antisite Model

Bardeleben,H.J.von ; Delerue,C. ; Stievenard,D.

Pub. info.:	Proceedings of the 17th International Conference on Defects in Semiconductors : ICDS-17, Gmunden, Austria, July 18-23, 1993. Pt.1 pp.223-228, 1994. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	143-147

Conference Proceedings

6. Screening of the Coulomb Interaction and Transition Metal Energy Levels Pinning to the Semiconductor Neutrality Level

Langer,J.M. ; Delerue,C. ; Lannoo,M.

Pub. info.:	Proceedings of the 15th International Conference on Defects in Semiconductors : Budapest, Hungary, August 22-26, 1988. Part1 pp.275-280, 1989. Aederlmannsdorf, Switzwelns. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	38-41

Conference Proceedings

7. The Relative Importance of Radiative and Non Radiative Recombinations in the Luminescence of Porous Silicon

Delerue,C. ; Lannoo,M. ; Allan,G.

Pub. info.:	Proceedings of the 17th International Conference on Defects in Semiconductors : ICDS-17, Gmunden, Austria, July 18-23, 1993. Pt.3 pp.1463-1468, 1994. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	143-147

Conference Proceedings

8. The Theory of Rare-Earth Impurities in Semiconductors

Delerue,C. ; Lannoo,M.

Pub. info.:	Proceedings of the 17th International Conference on Defects in Semiconductors : ICDS-17, Gmunden, Austria, July 18-23, 1993. Pt.2 pp.699-706, 1994. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	143-147

Conference Proceedings

9. Theory of substitutional rare earth impurities in semiconductors

Delerue,C. ; Lannoo,M.

Pub. info.:	Proceedings of the 16th International Conference on Defects in Semiconductors : Lehigh University, Bethlehem, Pennsylvania, 22-26 July 1991. Pt.2 pp.659-664, 1992. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	83-87

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Conference Proceedings

10. Role of silicon molecules and crystallites in the luminescence of porous silicon

Delerue,C. ; Allan,G. ; Lannoo,M.

Pub. info.:	Optical properties of low dimensional silicon structures. pp.229-234, 1993. Dordrecht. Kluwer Academic Publishers
Title of ser.:	NATO ASI series. Series E, Applied sciences
Ser. no.:	244

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Author: Delerue,C.