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14 results

Conference Proceedings

1. Oxidized Amorphous Silicon Improved LOCOS (OASI-LOCOS) Process for Low-Voltage, Low-Power, Sub-Quarter-Micron Device Isolation

Deleonibus, S. ; Martin, F. ; Heitzmann, M. ; Vinet, F.

Pub. info.:	ULSI science and technology, 1997 : proceedings of the Sixth International Symposium on Ultralarge Scale Integration Science and Technology. pp.491-502, 1997. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	97-3

Conference Proceedings

2. INTERBAND TUNNELING-BASED ULSI-COMPATIBLE SILICON DEVICES

Zaslavsky, A. ; Mariolle, D. ; Deleonibus, S. ; Fraboulet, D. ; Luryi, S. ; Liu, J. ; Aydin, C. ; Mastrapasqua, M. ; King, C.A. ; Johnson, R.W.

Pub. info.:	Semiconductor silicon 2002 : proceedings of the ninth International Symposium on Silicon Materials Science and Technology. pp.956-967, 2002. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2002-2

Conference Proceedings

3. Threshold voltage quantum simulations for ultra-thin silicon-on-insulator transistors

Lolivier, J. ; Deleonibus, S. ; Balestra, F.

Pub. info.:	Silicon-on-insulator technology and devices XI : proceedings of the international symposium. pp.379-382, 2003. Pennington, N.J.. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2003-5

Conference Proceedings

4. INTERBAND TUNNELING-BASED ULSI-COMPATIBLE SILICON DEVICES

Zaslavsky, A. ; Mariolle, D. ; Deleonibus, S. ; Fraboulet, D. ; Luryi, S. ; Liu, J. ; Aydin, C. ; Mastrapasqua, M. ; King, C.A. ; Johnson, R.W.

Pub. info.:	Semiconductor silicon 2002 : proceedings of the ninth International Symposium on Silicon Materials Science and Technology. pp.956-967, 2002. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2002-2

Conference Proceedings

5. The Thickness And Temperature Dependance Of Field Oxidation 3 Dimensional Behaviour. Example On Poly Buffer LOCOS Isolation

Deleonibus, S.

Pub. info.:	Proceedings of the third Symposium on Silicon Nitride and Silicon Dioxide Thin Insulating Films. pp.525-533, 1994. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	1994-16

Conference Proceedings

6. Optimization Of A Shallow Trench Isolation Refill Process For High Density Non Volatile Memories Using 100% Chemical-MechanicalPolishing. The Box-On Process

Deleonibus, S. ; Heitzmann, M. ; Demolliens, O. ; Gobil, Y. ; Martin, F. ; Papon, A.-M. ; Mondon, F.

Pub. info.:	Proceedings of the third Symposium on Silicon Nitride and Silicon Dioxide Thin Insulating Films. pp.485-491, 1994. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	1994-16

Conference Proceedings

7. DAMASCENE METAL GATE FOR 70 nm CMOS PROCESS

Guillaumot, B. ; Ducroquet, F. ; Ernst, T. ; Guegan, G. ; Galon, C. ; Renard, C. ; PrevitaIi, B. ; Rivoire, M. ; Nier, M.E. ; Tedesco, S. ; Fargeot, T. ; Achard, H. ; Deleonibus, S.

Pub. info.:	Semiconductor silicon 2002 : proceedings of the ninth International Symposium on Silicon Materials Science and Technology. pp.793-802, 2002. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2002-2

Conference Proceedings

8. Advanced SOI MOSFETs: structures and device physics Invited

Faynot, O. ; Vandooren, A. ; Ritzenthaler, R. ; Poiroux, T. ; Lolivier, J. ; Jahan, C. ; Barraud, S. ; Ernst, T. ; Andrieu, F. ; Casse, M. ; Giffard B. ; Deleonibus, S.

Pub. info.:	Silicon-on-insulator technology and devices XII : proceedings of the international symposium. pp.1-10, 2005. Pennington, N.J.. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2005-03

Conference Proceedings

9. Two-Band Tunneling Currents and Stress-Induced Leakage in Ultrathin SiO2 Films

Okhonin, S. ; Ils, A. ; Bouvet, D. ; Fazan, P. ; Guegan, G. ; Deleonibus, S. ; Martin, F.

Pub. info.:	Ultrathin SiO[2] and high-K materials for USLI gate dielectrics : symposium held April 5-8, 1999, in San Francisco, California, U.S.A.. pp.253-, 1999. Warrendale, PA. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	567

10.

Conference Proceedings

10. Planar Bonded Double Gate MOS Transistors Down to LG = 10 nm (Invited paper)

Vinet, M. ; Widiez, J. ; Lolivier, J. ; Poiroux, T. ; Biasse, B. ; Previtali, B. ; Dechamp, J. ; Deleonibus, S.

Pub. info.:	ULSI Process Integration : proceedings of the International Symposium. pp.285-295, 2005. Pennington, N.J.. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2005-06

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