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29 results

Conference Proceedings

1. ArF step-and-scan exposure system for 0.15-ｦﾌm and 0.13-ｦﾌm technology nodes

Mulkens,J. ; Stoeldraijer,J.M. ; Davies,G. ; Dierichs,M. ; Heskamp,B. ; Moers,M.H. ; George,R.A. ; Roempp,O. ; Glatzel,H. ; Wagner,C. ; Pollers,I. ; Jaenen,P.

Pub. info.:	Optical microlithography XII : 17-19 March 1999, Santa Clara, California. Part1 pp.506-521, 1999. Bellingham, Wash., USA. SPIE - The International Society for Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	3679

Conference Proceedings

2. 193-nm lithography on a full-field scanner

Goethals,A.-M. ; Pollers,I. ; Jaenen,P. ; Roey,F.Van ; Ronse,K. ; Heskamp,B. ; Davies,G.

Pub. info.:	Optical microlithography XII : 17-19 March 1999, Santa Clara, California. Part1 pp.278-289, 1999. Bellingham, Wash., USA. SPIE - The International Society for Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	3679

Conference Proceedings

3. Status of ArF lithography for the 130-nm technology node

Ronse,K. ; Vandenberghe,G. ; Jaenen,P. ; Delvaux,C. ; Vangoidsenhoven,D. ; Roey,F.Van ; Pollers,I. ; Maenhoudt,M. ; Goethals,A.M. ; Pollentier,I.K. ; Vleeming,B. ; Schenau,K.van lngen ; Heskamp,B. ; Davies,G. ; Niroomand,A.

Pub. info.:	Optical microlithography XIII : 1-3 March 2000, Santa Clara, USA. Part1 pp.410-422, 2000. Bellingham, Wash., USA. SPIE - The International Society for Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	4000

Conference Proceedings

4. Shallow excited states of the 1014 meV Cu related optical center in Si

Nazare,M.H. ; Duarte,A.J. ; Steele,A.G. ; Davies,G. ; Light-owlers,E.C.

Pub. info.:	Proceedings of the 16th International Conference on Defects in Semiconductors : Lehigh University, Bethlehem, Pennsylvania, 22-26 July 1991. Pt.1 pp.191-196, 1992. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	83-87

Conference Proceedings

5. Interactions between defects during the annealing of crystalline silicon

Davies,G. ; Kwok,T.K. ; Reade,T.

Pub. info.:	Proceedings of the 16th International Conference on Defects in Semiconductors : Lehigh University, Bethlehem, Pennsylvania, 22-26 July 1991. Pt.1 pp.315-320, 1992. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	83-87

Conference Proceedings

6. Study of a Li- and C-related center formed at high annealing temperatures in neutron-irradiated FZ silicon doped with Li

Rodriguez,F. ; Davies,G. ; Lightowlers,E.C.

Pub. info.:	Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997. Part1 pp.635-640, 1997. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	258-263

Conference Proceedings

7. Fano resonances in a vibronic sideband in silicon

Gower,J.E. ; Davies,G. ; Lightowlers,E.C.

Pub. info.:	Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997. Part1 pp.571-574, 1997. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	258-263

Conference Proceedings

8. Carbon-Hydrogen Deep Level Luminescence Centre in Silicon Responsible for the T-Line

Safonov,A.N. ; Lightowlers,E.C. ; Davies,G.

Pub. info.:	Proceedings of the 18th International Conference on Defects in Semiconductors : ICDS-18, Sendai, Japan, July 23-28, 1995. pp.909-914, 1995. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	196-201

Conference Proceedings

9. Isotopic Dependence of Near-Band-Gap Luminescence from Germanium

Davies,G. ; Lightowlers,E.C. ; Ozhogin,V. ; Itoh,K. ; Hansen,W.L. ; Haller,E.E.

Pub. info.:	Shallow Impurities in Semiconductors : Proceedings of the Fifth International Conference on Shallow Impurities in Semiconductors "Physics and Control of Impurities", International Conference Center Kobe, Japan, 5 to 8 August, 1992. pp.111-116, 1993. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	117-118

10.

Conference Proceedings

10. The Structure of a Metastable Luminescent Defect in Sulphur-doped Silicon

Singh,M. ; Davies,G. ; Lightowlers,E.C. ; Watkins,G.D.

Pub. info.:	Shallow Impurities in Semiconductors : Proceedings of the Fifth International Conference on Shallow Impurities in Semiconductors "Physics and Control of Impurities", International Conference Center Kobe, Japan, 5 to 8 August, 1992. pp.141-146, 1993. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	117-118

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