1.

Conference Proceedings
Conference Proceedings
1. Infrared and Raman Studies of Carbon Impurities in Highly Doped MBE AlAs:C
Davidson,B.R. ; Newman,R.C. ; Pritchard,R.E. ; Robbie,D.A. ; Sangster,M.J.L. ; Wagner,J. ; Fischer,A. ; Ploog,K.
Pub. info.: Proceedings of the 17th International Conference on Defects in Semiconductors : ICDS-17, Gmunden, Austria, July 18-23, 1993.  Pt.1  pp.247-252,  1994.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 143-147
2.

Conference Proceedings
Conference Proceedings
2. The Assignment of the 78/2O3meV Double Acceptor in GaAs to BAS Impurity Antisite Centers
Newman,R.C. ; Davidson,B.R. ; Addinall,R. ; Murray,R. ; Emmert,J.W. ; Wagner,J. ; Gotz,W. ; Roos,G. ; Pensl,G.
Pub. info.: Proceedings of the 17th International Conference on Defects in Semiconductors : ICDS-17, Gmunden, Austria, July 18-23, 1993.  Pt.1  pp.229-234,  1994.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 143-147
3.

Conference Proceedings
Conference Proceedings
3. Recent developments and theory relating to impurity induced LVM:s in GaP and GaAs.(Invited)
Newman,R.C. ; Grosche,E.G. ; Ashwin,M.J. ; Davidson,B.R. ; Robbie,D.A. ; Leigh,R.S. ; Sangster,M.J.L.
Pub. info.: Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997.  Part1  pp.1-10,  1997.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 258-263
4.

Conference Proceedings
Conference Proceedings
4. Carbon Delta-Doping in GaAs and AlAs
Hart,L. ; Davidson,B.R. ; Fernandez,J.M. ; Newman,R.C. ; Button,C.C.
Pub. info.: Proceedings of the 18th International Conference on Defects in Semiconductors : ICDS-18, Sendai, Japan, July 23-28, 1995.  pp.409-414,  1995.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 196-201