1.

Conference Proceedings
Conference Proceedings
1. Strained Silicon on Insulator Wafers Made by the Smart CutTM Technology
Ghyselen, B. ; Bogumilowicz, Y. ; Aulnette, C. ; Abbadie, A. ; Osternaud, B. ; Besson, P. ; Daval, N. ; Andrieu, F. ; Cayrefourq, I. ; Moriceau, H. ; Ernst, T. ; Tiberj, A. ; Rayssac, O. ; Blondeau, B. ; Mazure, C. ; Lagahe-Blanchard, C. ; Pocas, S. ; Cartier, A.-M. ; Hartmann, J.-M. ; Leduc, P. ; Nardo, C.Di ; Lugand, J.-F. ; Fournel, F. ; Semeria, M.-N. ; Kernevez, N. ; Campidelli, Y. ; Kermarrec, O. ; Morand, Y. ; Rivoire, M. ; Bensahel, D. ; Paillard, V. ; Vincent, L. ; Claverie, A. ; Boucaud, P.
Pub. info.: High-mobility group-IV materials and devices : symposium held April 13-15, 2004, San Francisco, California, U.S.A..  pp.83-88,  2004.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 809
2.

Conference Proceedings
Conference Proceedings
2. nnovative Substrate Solutions for Wide Band Gap Materials: the Smart CutTM Approach
Letertre, F. ; Daval, N. ; Templier, F. ; DiCioccic, L. ; Richtarch, C. ; Faure, B. ; Cartier, A.M. ; Matko, I.
Pub. info.: State-of-the-art program on compound semiconductors XXXVIII and wide bandgap semiconductors for photonic and electronic devices and sensors III : proceedings of the international symposia.  pp.223-228,  2003.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2003-4
3.

Conference Proceedings
Conference Proceedings
3. On the mechanism of the Smart CutTM layer transfer in relaxed SiGe
Nguyen, P. ; Aulnette, C. ; Guiot, E. ; Daval, N. ; Bourdelle K.K. ; Cayrefourcq, I. ; Deguet, C. ; Sartori, S. ; Tauzin, A. ; Lagahe-Blanchard, C. ; Soubie, A.
Pub. info.: Silicon-on-insulator technology and devices XII : proceedings of the international symposium.  pp.185-190,  2005.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2005-03
4.

Conference Proceedings
Conference Proceedings
4. Ge pile-up and defect formation during dry oxidation of SiGe
Daval, N. ; Guiot, E. ; Bourdelle, K. K. ; Kennard, M. ; Cayrefourcq, I. ; Akatsu, T. ; Mazure, C. ; Cerva, H. ; Rucki, A.
Pub. info.: Crystalline defects and contamination: their impact and control in device manufacturing IV : DECON 2005 : proceedings of the Satellite Symposium to ESSDERC 2005, Grenoble, France.  pp.42-51,  2005.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2005-10
5.

Conference Proceedings
Conference Proceedings
5. (19.1) 1:10 - 1:30 PM - SiGe Wet Oxidation at Low Temperatures
Daval, N. ; Guiot, E. ; Bisson, S. ; Cayrefourcq, I. ; Bourdelle, K. K. (SOITEC)
Pub. info.: SiGe: materials, processing, and devices : proceedings of the First international symposium.  pp.1115-1122,  2004.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2004-07
6.

Conference Proceedings
Conference Proceedings
6. SiC Power Devices on QUASIC and SiCOI Smart-CutR Substrates: First Demonstrations
Letertre, F. ; Daval, N. ; Templier, F. ; Bano, E. ; Planson, D. ; Di Cioccio, L. ; Jalaguier, E. ; Bluet, J.M. ; Billon, T. ; Madar, R. ; Chante, J.P.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.813-818,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436