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21 results

Conference Proceedings

1. High Current 6 kV 4H-SiC PiN Diodes for Power Module Switching Applications

Hull, B.A. ; Das, M.K. ; Richmond, J.T. ; Heath, B. ; Sumakeris, J.J. ; Geil, B.R. ; Scozzie, C.J.

Pub. info.:	Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005. pp.1355-1358, 2006. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	527-529

Conference Proceedings

2. Evolution of Drift-Free, High Power 4H-SiC PiN Diodes

Das, M.K. ; Sumakeris, J.J. ; Hull, B.A. ; Richmond, J.

Pub. info.:	Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005. pp.1329-1334, 2006. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	527-529

Conference Proceedings

3. High-Temperature (up to 800 K) Operation of 6-kV 4F-SiC Junction Diodes

Levinshtein, M.E. ; Ivanov, P.A. ; Boltovets, M.S. ; Krivutsa, V.A. ; Palmour, J.W. ; Das, M.K. ; Hull, B.A.

Pub. info.:	Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005. pp.1339-1342, 2006. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	527-529

Conference Proceedings

4. Silicon Carbide Power Diodes as Radiation Detectors

Phlips, B.F. ; Hobart, K.D. ; Kub, F.J. ; Stahlbush, R.E. ; Das, M.K. ; De Geronimo, G. ; O' Connor, P.

Pub. info.:	Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005. pp.1465-1468, 2006. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	527-529

Conference Proceedings

5. Enhanced Carrier Lifetime in Bulk-Grown 4H-SiC Substrates

Jenny, J.R. ; Malta, D.P. ; Tsvetkov, V.T. ; Das, M.K. ; McD. Hobgood, H. ; Carter, C.H.Jr

Pub. info.:	Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005. pp.31-34, 2006. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	527-529

Conference Proceedings

6. Techniques for Minimizing the Basal Plane Dislocation Density in SiC Epilayers to Reduce Vf Drift in SiC Bipolar Power Devices

Sumakeris, J.J. ; Bergman, J.P. ; Das, M.K. ; Hallin, C. ; Hull, B.A. ; Janzen, E. ; Lendenmann, H. ; O'Loughlin, M.J. ; Paisley, M.J. ; Ha, S. ; Skowronski, M. ; Palmour, J.W. ; Carter, C.H.,Jr

Pub. info.:	Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005. pp.141-146, 2006. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	527-529

Conference Proceedings

7. Improved 4H-SiC MOS Interfaces Produced via Two Independent Processes: Metal Enhanced Oxidation and 1300oC NO Anneal

Das, M.K. ; Hull, B.A. ; Krishnaswami, S. ; Husna, F. ; Haney, S. ; Lelis, A.J. ; Scozzie, C.J. ; Scofield, J.D.

Pub. info.:	Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005. pp.967-970, 2006. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	527-529

Conference Proceedings

8. Development of 8 mΩ-cm2, 1.8 kV 4H-SiC DMOSFETs

Ryu, S.H. ; Krishnaswami, S. ; Hull, B.A. ; Heath, B. ; Das, M.K. ; Richmond, J.T. ; Agarwal, A.K. ; Palmour, J.W. ; Scofield, J.D.

Pub. info.:	Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005. pp.1261-1264, 2006. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	527-529

Conference Proceedings

9. Passivation of the 4H-SiC/SiO2 Interface with Nitric Oxide

Williams, J.R. ; Chung, G.Y. ; Tin, C.C. ; McDonald, K. ; Farmer, D. ; Chanana, R.K. ; Weller, R.A. ; Pantelides, S.T. ; Holland, O.W. ; Das, M.K. ; Feldman, L.C.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.967-972, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

10.

Conference Proceedings

10. N2O Processing Improves the 4H-SiC:SiO2 Interface

Lipkin, L.A. ; Das, M.K. ; Palmour, J.W.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.985-988, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

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Author: Das, M.K.